- Package / Case :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 2A DO220AA | DO-220AA | eSMP® | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | DO-220AA (SMP) | Standard | 200V | 980mV @ 2A | 25ns | 1µA @ 200V | -55°C ~ 175°C | 2A | 25pF @ 4V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 2A DO220AA | DO-220AA | eSMP® | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | DO-220AA (SMP) | Standard | 150V | 980mV @ 2A | 25ns | 1µA @ 150V | -55°C ~ 175°C | 2A | 25pF @ 4V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 2A DO220AA | DO-220AA | eSMP® | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | DO-220AA (SMP) | Standard | 100V | 980mV @ 2A | 25ns | 1µA @ 100V | -55°C ~ 175°C | 2A | 25pF @ 4V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO214AC | DO-214AC, SMA | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | DO-214AC (SMA) | Standard | 200V | 900mV @ 1A | 25ns | 1µA @ 200V | -55°C ~ 175°C | 1A | - |