- Manufacture :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Semtech Corporation | DIODE GEN PURP 1KV 15A | - | - | - | Standard Recovery >500ns, > 200mA (Io) | - | Active | - | Standard | 1000V | 1.2V @ 9A | 2µs | 1µA @ 1000V | -55°C ~ 175°C | 15A | - | ||||
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Semtech Corporation | DIODE GEN PURP 1KV 10A | - | - | - | Fast Recovery =< 500ns, > 200mA (Io) | - | Active | - | Standard | 1000V | 2.2V @ 9A | 150ns | 1µA @ 1000V | -55°C ~ 175°C | 10A | - | ||||
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Semtech Corporation | DIODE GEN PURP 1KV 15A | - | - | - | Standard Recovery >500ns, > 200mA (Io) | - | Active | - | Standard | 1000V | 1.2V @ 9A | 2µs | 1µA @ 1000V | -55°C ~ 175°C | 15A | - | ||||
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Semtech Corporation | DIODE GEN PURP 1KV 15A | - | - | - | Standard Recovery >500ns, > 200mA (Io) | - | Active | - | Standard | 1000V | 1.2V @ 9A | 2µs | 1µA @ 1000V | -55°C ~ 175°C | 15A | - | ||||
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Semtech Corporation | DIODE GEN PURP 1KV 10A | - | - | - | Fast Recovery =< 500ns, > 200mA (Io) | - | Active | - | Standard | 1000V | 2.2V @ 9A | 150ns | 1µA @ 1000V | -55°C ~ 175°C | 10A | - | ||||
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Semtech Corporation | DIODE GEN PURP 1KV 15A | - | - | - | Standard Recovery >500ns, > 200mA (Io) | - | Active | - | Standard | 1000V | 1.2V @ 9A | 2µs | 1µA @ 1000V | -55°C ~ 175°C | 15A | - | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 1.8V @ 50A | 0ns | 1mA @ 1200V | -55°C ~ 175°C | 50A | 2940pF @ 1V, 1MHz |