- Package / Case :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 2A DO220AA | DO-220AA | eSMP® | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | DO-220AA (SMP) | Schottky | 100V | 800mV @ 2A | - | 1µA @ 100V | -55°C ~ 175°C | 2A | 65pF @ 4V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 2A DO220AA | DO-220AA | eSMP® | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | DO-220AA (SMP) | Schottky | 100V | 800mV @ 2A | - | 1µA @ 100V | -55°C ~ 175°C | 2A | 65pF @ 4V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 2A DO220AA | DO-220AA | eSMP® | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | DO-220AA (SMP) | Standard | 200V | 980mV @ 2A | 25ns | 1µA @ 200V | -55°C ~ 175°C | 2A | 25pF @ 4V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 2A DO220AA | DO-220AA | eSMP® | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | DO-220AA (SMP) | Standard | 150V | 980mV @ 2A | 25ns | 1µA @ 150V | -55°C ~ 175°C | 2A | 25pF @ 4V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 2A DO220AA | DO-220AA | eSMP® | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | DO-220AA (SMP) | Standard | 100V | 980mV @ 2A | 25ns | 1µA @ 100V | -55°C ~ 175°C | 2A | 25pF @ 4V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 90V 2A DO220AA | DO-220AA | eSMP® | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | DO-220AA (SMP) | Schottky | 90V | 800mV @ 2A | - | 1µA @ 90V | -55°C ~ 175°C | 2A | 65pF @ 4V, 1MHz |