- Package / Case :
- Series :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ON Semiconductor | DIODE GEN PURP 400V 1A SMA | DO-214AC, SMA | - | Standard Recovery >500ns, > 200mA (Io) | Surface Mount | Obsolete | SMA | Standard | 400V | 1.1V @ 1A | - | 10µA @ 400V | -55°C ~ 175°C | 1A | - | ||||||
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ON Semiconductor | DIODE GEN PURP 400V 1A SMA | DO-214AC, SMA | - | Standard Recovery >500ns, > 200mA (Io) | Surface Mount | Active | SMA | Standard | 400V | 1.1V @ 1A | - | 10µA @ 400V | -55°C ~ 175°C | 1A | - | ||||||
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ON Semiconductor | DIODE GEN PURP 400V 1A SMA | DO-214AC, SMA | - | Standard Recovery >500ns, > 200mA (Io) | Surface Mount | Active | SMA | Standard | 400V | 1.1V @ 1A | - | 10µA @ 400V | -55°C ~ 175°C | 1A | - | ||||||
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Vishay Semiconductor Diodes Division | DIODE AVALANCHE 400V 1.6A TO277A | TO-277, 3-PowerDFN | eSMP® | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Discontinued at Digi-Key | TO-277A (SMPC) | Avalanche | 400V | 1.9V @ 2A | 75ns | 10µA @ 400V | -55°C ~ 175°C | 1.6A (DC) | 42pF @ 4V, 1MHz | ||||||
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ON Semiconductor | DIODE GEN PURP 400V 1A SMA | DO-214AC, SMA | - | Standard Recovery >500ns, > 200mA (Io) | Surface Mount | Obsolete | SMA | Standard | 400V | 1.1V @ 1A | - | 10µA @ 400V | -55°C ~ 175°C | 1A | - | ||||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 5A DO201AD | DO-201AD, Axial | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Standard | 400V | 1.55V @ 5A | 20ns | 10µA @ 400V | -55°C ~ 175°C | 5A | - | ||||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A SUB SMA | DO-219AB | - | Standard Recovery >500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Standard | 600V | 1.1V @ 1A | 1.8µs | 5µA @ 600V | -55°C ~ 175°C | 1A | 9pF @ 4V, 1MHz | ||||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 1KV 1A SUB SMA | DO-219AB | - | Standard Recovery >500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Standard | 1000V | 1.1V @ 1A | 1.8µs | 5µA @ 1000V | -55°C ~ 175°C | 1A | 9pF @ 4V, 1MHz |