- Current - Reverse Leakage @ Vr :
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1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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6,268
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz |