- Mounting Type :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE SILICON 650V 20A TO247 | TO-247-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247 | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A | 730pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SILICON 650V 15A TO247 | TO-247-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247 | Silicon Carbide Schottky | 650V | 1.55V @ 15A | 0ns | 300µA @ 600V | 175°C (Max) | 15A | 550pF @ 1V, 1MHz | ||||
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ON Semiconductor | 650V 30A SIC SBD | TO-247-3 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 23A (DC) | 887pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 20A SIC SBD | TO-247-3 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 13A (DC) | 575pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 16A SIC SBD | TO-247-3 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 11A (DC) | 463pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 20A SIC SBD GEN1.5 | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 10A (DC) | 421pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 20A SIC SBD GEN1.5 | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 10A (DC) | 421pF @ 1V, 100kHz | ||||
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STMicroelectronics | AUTOMOTIVE 650 V POWER SCHOTTKY | TO-262-3 Long Leads, I²Pak, TO-262AA | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | I2PAK | Silicon Carbide Schottky | 650V | - | 0ns | 100µA @ 650V | -40°C ~ 175°C | 10A | 480pF @ 0V, 1MHz | ||||
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STMicroelectronics | DIODES AND RECTIFIERS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, ECOPACK®2 | No Recovery Time > 500mA (Io) | Surface Mount | Active | D2PAK | Silicon Carbide Schottky | 650V | 1.45V @ 20A | 0ns | 150µA @ 600V | -40°C ~ 175°C | 20A | 1250pF @ 0V, 1MHz | |||||
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STMicroelectronics | DIODE SCHOTTKY 650V 8A TO220AC | TO-220-2 | ECOPACK®2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.45V @ 8A | 0ns | 105µA @ 650V | -40°C ~ 175°C | 8A | 540pF @ 0V, 1MHz | ||||
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STMicroelectronics | DIODES AND RECTIFIERS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, ECOPACK®2 | No Recovery Time > 500mA (Io) | Surface Mount | Active | D2PAK | Silicon Carbide Schottky | 650V | 1.45V @ 12A | 0ns | 50µA @ 600V | -40°C ~ 175°C | 12A | 750pF @ 0V, 1MHz | |||||
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STMicroelectronics | AUTOMOTIVE 650 V POWER SCHOTTKY | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 650V | - | 0ns | 100µA @ 650V | -40°C ~ 175°C | 10A | 480pF @ 0V, 1MHz | |||||
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STMicroelectronics | DIODES AND RECTIFIERS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, ECOPACK®2 | No Recovery Time > 500mA (Io) | Surface Mount | Active | D2PAK | Silicon Carbide Schottky | 650V | 1.45V @ 10A | 0ns | 130µA @ 650V | -40°C ~ 175°C | 10A | 670pF @ 0V, 1MHz | |||||
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STMicroelectronics | AUTOMOTIVE 650 V POWER SCHOTTKY | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 650V | - | 0ns | 80µA @ 650V | -40°C ~ 175°C | 8A | 414pF @ 0V, 1MHz | |||||
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STMicroelectronics | AUTOMOTIVE 650 V POWER SCHOTTKY | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 650V | - | 0ns | 60µA @ 650V | -40°C ~ 175°C | 6A | 300pF @ 0V, 1MHz | |||||
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STMicroelectronics | DIODE SCHOTTKY 650V 10A TO220AC | TO-220-2 | ECOPACK®2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.45V @ 10A | 0ns | 130µA @ 650V | -40°C ~ 175°C | 10A | 670pF @ 0V, 1MHz | ||||
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STMicroelectronics | DIODE SCHOTTKY 650V 8A TO220AC | TO-220-2 | Automotive, AEC-Q101, ECOPACK®2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.45V @ 8A | 0ns | 105µA @ 650V | -40°C ~ 175°C | 8A | 540pF @ 0V, 1MHz |