- Packaging :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE GEN PURP 220V 200MA MSD | DO-204AG, DO-34, Axial | Tape & Box (TB) | Small Signal =< 200mA (Io), Any Speed | Through Hole | Obsolete | MSD | Standard | 220V | 1.5V @ 200mA | 75ns | 10µA @ 220V | 175°C (Max) | 200mA | 3pF @ 0V, 1MHz | ||||
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ROHM Semiconductor | DIODE GEN PURP 220V 200MA MSD | DO-204AG, DO-34, Axial | Tape & Box (TB) | Small Signal =< 200mA (Io), Any Speed | Through Hole | Obsolete | MSD | Standard | 220V | 1.5V @ 200mA | 75ns | 10µA @ 220V | 175°C (Max) | 200mA | 3pF @ 0V, 1MHz | ||||
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ROHM Semiconductor | DIODE SC SCHKY 650V 6A TO220ACP | TO-220-2 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 650V | 1.5V @ 6A | 0ns | 30µA @ 650V | 175°C (Max) | 6A | 300pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 6A | 0ns | 30µA @ 650V | 175°C (Max) | 6A (DC) | 300pF @ 1V, 1MHz | ||||
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WeEn Semiconductors | DIODE GEN PURP 600V 9A TO220F | TO-220-2 Full Pack | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220F | Standard | 600V | 1.3V @ 8A | 75ns | 10µA @ 600V | 175°C (Max) | 9A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 220V 200MA MSD | DO-204AG, DO-34, Axial | Tape & Box (TB) | Small Signal =< 200mA (Io), Any Speed | Through Hole | Obsolete | MSD | Standard | 220V | 1.5V @ 200mA | 75ns | 10µA @ 220V | 175°C (Max) | 200mA | 3pF @ 0V, 1MHz | ||||
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STMicroelectronics | DIODE GEN PURP 600V 4A DO201AD | DO-201AD, Axial | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 600V | 1.3V @ 3A | 75ns | 3µA @ 600V | 175°C (Max) | 4A | - | |||||
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STMicroelectronics | DIODE GEN PURP 1.2KV 2A DO201AD | DO-201AD, Axial | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 1200V | 1.75V @ 2A | 75ns | 10µA @ 1200V | 175°C (Max) | 2A | - | ||||
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STMicroelectronics | DIODE GEN PURP 1.2KV 1A DO41 | DO-204AL, DO-41, Axial | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 1200V | 1.9V @ 1A | 75ns | 5µA @ 1200V | 175°C (Max) | 1A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 220V 200MA MSD | DO-204AG, DO-34, Axial | Tape & Box (TB) | Small Signal =< 200mA (Io), Any Speed | Through Hole | Obsolete | MSD | Standard | 220V | 1.5V @ 200mA | 75ns | 10µA @ 220V | 175°C (Max) | 200mA | 3pF @ 0V, 1MHz | ||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 6A | 0ns | 30µA @ 650V | 175°C (Max) | 6A (DC) | 300pF @ 1V, 1MHz |