- Packaging :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
169 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Sanken | DIODE GEN PURP 1.5KV 2.5A AXIAL | Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | - | Standard | 1500V | - | 1µs | - | - | 2.5A | - | ||||
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Sanken | DIODE SCHOTTKY 40V 2.5A AXIAL | Axial | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | - | Schottky | 40V | 550mV @ 3A | - | 5mA @ 40V | -40°C ~ 150°C | 2.5A | - | ||||
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Sanken | DIODE SCHOTTKY 40V 2.5A AXIAL | Axial | - | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | - | Schottky | 40V | 550mV @ 3A | - | 5mA @ 40V | -40°C ~ 150°C | 2.5A | - | ||||
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Semtech Corporation | DIODE GEN PURP 5KV 2.5A | Module | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 5000V | 6V @ 3A | 2µs | 1µA @ 5000V | -55°C ~ 150°C | 2.5A | - | ||||
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Semtech Corporation | DIODE GEN PURP 2.5KV 2.5A MODULE | Module | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 2500V | 6.6V @ 3A | 150ns | 1µA @ 2500V | -55°C ~ 150°C | 2.5A | - | ||||
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Semtech Corporation | DIODE GEN PURP 5KV 2.5A MODULE | Module | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 5000V | 6V @ 3A | 2µs | 1µA @ 5000V | -55°C ~ 150°C | 2.5A | - | ||||
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Semtech Corporation | DIODE GEN PURP 150V 2.5A AXIAL | Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 150V | 875mV @ 1A | 25ns | 1µA @ 150V | -65°C ~ 175°C | 2.5A | 25pF @ 5V, 1MHz | |||||
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SMC Diode Solutions | DIODE GEN PURP 600V 2.5A DO15 | DO-204AC, DO-15, Axial | - | Tape & Box (TB) | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-15 | Standard | 600V | 1.1V @ 2.5A | - | 2.5µA @ 600V | -55°C ~ 150°C | 2.5A | 45pF @ 4V, 1MHz | ||||
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SMC Diode Solutions | DIODE GEN PURP 600V 2.5A DO15 | DO-204AC, DO-15, Axial | - | Tape & Box (TB) | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-15 | Standard | 600V | 1.1V @ 2.5A | - | 2.5µA @ 600V | -55°C ~ 150°C | 2.5A | 45pF @ 4V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | ||||
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6,287
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | |||
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2,737
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz | |||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.34V @ 10A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 9.4A (DC) | 1107pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2.5A SMB | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | SMB (DO-214AA) | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 2.5A | 69pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.74V @ 750mA | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 750mA | 66pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.3V @ 2.5A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 2.5A | 274pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 650V | 1.39V @ 750mA | 0ns | 5µA @ 650V | -55°C ~ 250°C | 750mA | 76pF @ 1V, 1MHz |