Chat with us, powered by LiveChat
Build a global manufacturer and supplier trusted trading platform.
Packaging :
Voltage - DC Reverse (Vr) (Max) :
Voltage - Forward (Vf) (Max) @ If :
Reverse Recovery Time (trr) :
Current - Reverse Leakage @ Vr :
Operating Temperature - Junction :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Speed Mounting Type Part Status Supplier Device Package Diode Type Voltage - DC Reverse (Vr) (Max) Voltage - Forward (Vf) (Max) @ If Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Current - Average Rectified (Io) Capacitance @ Vr, F
FC3356-R25
RFQ
ON Semiconductor DIODE GEN PURP 1KV 8A TO220-2 TO-220-2 SWITCHMODE™ Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-220-2 Standard 1000V 1.8V @ 8A 100ns 25µA @ 1000V -65°C ~ 175°C 8A -
ESD5465E-6/TR
Per Unit
$0.3267
RFQ
ON Semiconductor DIODE GEN PURP 600V 8A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 Automotive, AEC-Q101, STEALTH™ II Fast Recovery =< 500ns, > 200mA (Io) Surface Mount Active TO-252 Standard 600V 2.6V @ 8A 30ns 100µA @ 600V -65°C ~ 150°C 8A -
DM77S185J/883B
Per Unit
$1.0600
RFQ
ON Semiconductor DIODE GEN PURP 1KV 8A TO220-2 TO-220-2 SWITCHMODE™ Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Active TO-220-2 Standard 1000V 1.8V @ 8A 100ns 25µA @ 1000V -65°C ~ 175°C 8A -
MUR8100E
RFQ
ON Semiconductor DIODE GEN PURP 1KV 8A TO220-2 TO-220-2 SWITCHMODE™ Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-220-2 Standard 1000V 1.8V @ 8A 100ns 25µA @ 1000V -65°C ~ 175°C 8A -
FFD08S60S-F085
Per Unit
$0.3267
RFQ
ON Semiconductor DIODE GEN PURP 600V 8A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 Automotive, AEC-Q101, STEALTH™ II Fast Recovery =< 500ns, > 200mA (Io) Surface Mount Active TO-252 Standard 600V 2.6V @ 8A 30ns 100µA @ 600V -65°C ~ 150°C 8A -
Page 1 / 1