- Manufacture :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A (DC) | 131pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A (DC) | 131pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A (DC) | 131pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A (DC) | 131pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A (DC) | 131pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A (DC) | 131pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 2A (DC) | 131pF @ 1V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 18A TO220AC | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 1200V | 3.3V @ 18A | 70ns | 100µA @ 1200V | -55°C ~ 150°C | 18A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 18A TO247 | TO-247-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 1200V | 3.3V @ 18A | 70ns | 100µA @ 1200V | -55°C ~ 150°C | 18A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 18A TO263-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Stealth™ | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TO-263AB | Standard | 1200V | 3.3V @ 18A | 300ns | 100µA @ 1200V | -55°C ~ 175°C | 18A | - | |||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 18A TO220AC | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 1200V | 3.3V @ 18A | 70ns | 100µA @ 1200V | -55°C ~ 150°C | 18A | - |