- Series :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D2PAK | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | |||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | |||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 Full Pack, Isolated Tab | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | ITO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D2PAK | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | |||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | |||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 Full Pack, Isolated Tab | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | ITO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 18A TO220AC | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 1200V | 3.3V @ 18A | 70ns | 100µA @ 1200V | -55°C ~ 150°C | 18A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 18A TO247 | TO-247-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 1200V | 3.3V @ 18A | 70ns | 100µA @ 1200V | -55°C ~ 150°C | 18A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 18A TO263-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Stealth™ | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TO-263AB | Standard | 1200V | 3.3V @ 18A | 300ns | 100µA @ 1200V | -55°C ~ 175°C | 18A | - | |||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 18A TO220AC | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 1200V | 3.3V @ 18A | 70ns | 100µA @ 1200V | -55°C ~ 150°C | 18A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 40V 18A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Schottky | 40V | 600mV @ 18A | - | 2.5mA @ 40V | -55°C ~ 175°C | 18A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 35V 18A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D2PAK | Schottky | 35V | 600mV @ 18A | - | 2.5mA @ 35V | -55°C ~ 175°C | 18A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 45V 18A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Schottky | 45V | 600mV @ 18A | - | 2.5mA @ 45V | -55°C ~ 175°C | 18A | - | ||||
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Littelfuse Inc. | SCHOTTKY DIODE SIC 1200V 10A | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Gen2 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263-2L | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 28A (DC) | 582pF @ 1V, 1MHz | |||||
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Littelfuse Inc. | DIODE SIC SCHOTTKY 1200V 8A | TO-220-2 | Gen2 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 8A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 24.5A (DC) | 454pF @ 1V, 1MHz | ||||
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Littelfuse Inc. | DIODE SIC SCHOTTKY 1200V 8A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Gen2 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252, (D-Pak) | Silicon Carbide Schottky | 1200V | 1.8V @ 8A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 24.5A (DC) | 454pF @ 1V, 1MHz |