- Mounting Type :
- Part Status :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
-
- 1220pF @ 1V, 100KHz (6)
- 1500pF @ 0V, 1MHz (2)
- 2250pF @ 1V, 100kHz (2)
- 2560pF @ 1V, 100kHz (2)
- 325pF @ 1V, 1MHz (2)
- 365pF @ 1V, 1MHz (12)
- 421pF @ 1V, 100kHz (4)
- 430pF @ 1V, 1MHz (2)
- 500pF @ 1V, 1MHz (8)
- 530pF @ 10V, 1MHz (2)
- 538pF @ 1V, 100kHz (4)
- 550pF @ 1V, 1MHz (4)
- 575pF @ 1V, 100kHz (2)
- 600pF @ 0V, 1MHz (2)
- 612pF @ 1V, 100kHz (10)
- 650pF @ 1V, 1MHz (2)
- 936pF @ 1V, 100kHz (4)
- 968pF @ 1V, 1MHz (14)
44 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220AC | Silicon Carbide Schottky | 1200V | 1.75V @ 10A | 0ns | 200µA @ 1200V | 175°C (Max) | 10A (DC) | 650pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 600V 10A TO220FM | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220FM | Silicon Carbide Schottky | 600V | 1.7V @ 10A | 0ns | 200µA @ 600V | 150°C (Max) | 10A (DC) | 430pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 10A TO220FM | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FM | Silicon Carbide Schottky | 650V | 1.55V @ 10A | 0ns | 200µA @ 600V | 175°C (Max) | 10A (DC) | 365pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 10A | 0ns | 200µA @ 600V | 175°C (Max) | 10A (DC) | 365pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 10A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 10A | 0ns | 200µA @ 600V | 175°C (Max) | 10A (DC) | 365pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 10A | 0ns | 50µA @ 650V | 175°C (Max) | 10A (DC) | 500pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1200V 10A TO220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 200µA @ 1200V | 175°C (Max) | 10A (DC) | 550pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 10A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 10A | 0ns | 200µA @ 600V | 175°C (Max) | 10A (DC) | 365pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 Full Pack | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FM | Silicon Carbide Schottky | 650V | 1.5V @ 10A | 0ns | 50µA @ 650V | 175°C (Max) | 10A (DC) | 500pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 10A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 10A | 0ns | 200µA @ 600V | 175°C (Max) | 10A (DC) | 365pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | DIODE SCHOTTKY 1200V 10A TO247 | TO-247-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247 | Silicon Carbide Schottky | 1200V | - | 0ns | - | 175°C (Max) | 10A (DC) | - | ||||
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ROHM Semiconductor | DIODE SC SCHKY 650V 10A TO220ACP | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 650V | 1.5V @ 10A | 0ns | 50µA @ 650V | 175°C (Max) | 10A (DC) | 500pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 200µA @ 1200V | 175°C (Max) | 10A (DC) | 550pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | TO-247-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247AC | Silicon Carbide Schottky | 1200V | 2V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 968pF @ 1V, 1MHz | ||||
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Central Semiconductor Corp | DIODE SCHOTTKY 650V 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 125µA @ 650V | -55°C ~ 175°C | 10A (DC) | 325pF @ 1V, 1MHz | ||||
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ON Semiconductor | 1200V 40A SIC SBD | TO-247-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | - | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 61A (DC) | 2250pF @ 1V, 100kHz | ||||
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ON Semiconductor | 1200V 20A AUTO SIC SBD | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 1200V | - | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 15A (DC) | 612pF @ 1V, 100kHz | ||||
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ON Semiconductor | 1200V 10A SIC SBD | TO-247-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | 1.75V @ 10A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 17A (DC) | 612pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 20A SIC SBD GEN1.5 | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 10A (DC) | 421pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 5A | 0ns | 200µA @ 1200V | - | - | - | ||||
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ON Semiconductor | 1200V 50A SIC SBD | TO-247-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | - | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 77A (DC) | 2560pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 1220pF @ 1V, 100KHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252, (D-Pak) | Silicon Carbide Schottky | 1200V | 1.75V @ 10A | 0ns | 200µA @ 1200V | - | - | 612pF @ 1V, 100kHz | |||||
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ON Semiconductor | 1200V 8A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252, (D-Pak) | Silicon Carbide Schottky | 1200V | 1.75V @ 8A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 22.5A (DC) | 538pF @ 1V, 100kHz |