- Mounting Type :
- Part Status :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
27 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Sanken | DIODE GEN PURP 600V 8A TO220F-2L | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 600V | 1.75V @ 8A | 27ns | 30µA @ 600V | -40°C ~ 150°C | 8A | - | |||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 8A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 8A | 0ns | 160µA @ 600V | 175°C (Max) | 8A (DC) | 291pF @ 1V, 1MHz | ||||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 8A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 8A | 0ns | 160µA @ 600V | 175°C (Max) | 8A (DC) | 291pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 8A | 0ns | 40µA @ 650V | 175°C (Max) | 8A (DC) | 400pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | DIODE SC SCHKY 650V 8A TO220ACP | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 650V | 1.5V @ 8A | 0ns | 40µA @ 650V | 175°C (Max) | 8A (DC) | 400pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 8A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 8A | 0ns | 160µA @ 600V | 175°C (Max) | 8A (DC) | 291pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 8A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 8A | 0ns | 160µA @ 600V | 175°C (Max) | 8A (DC) | 291pF @ 1V, 1MHz | ||||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 2.5A | 0ns | 10µA @ 1200V | -55°C ~ 250°C | 8A (DC) | 237pF @ 1V, 1MHz | |||||
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ON Semiconductor | 650V 8A SIC SBD | TO-220-2 Full Pack | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | 1.75V @ 8A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 8A (DC) | 463pF @ 1V, 100kHz | |||||
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ON Semiconductor | 650V 8A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D-PAK (TO-252) | Silicon Carbide Schottky | 650V | 1.75V @ 8A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 15A (DC) | 463pF @ 1V, 100kHz | |||||
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ON Semiconductor | 1200V 8A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252, (D-Pak) | Silicon Carbide Schottky | 1200V | 1.75V @ 8A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 22.5A (DC) | 538pF @ 1V, 100kHz | ||||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 8A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 8A | - | 200µA @ 1200V | -55°C ~ 175°C | 8A (DC) | 538pF @ 1V, 100kHz | |||||
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ON Semiconductor | DIODE SCHOTTKY 650V 13A TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 650V | 1.75V @ 8A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 13A (DC) | 463pF @ 1V, 100kHz | |||||
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Sanken | DIODE GEN PURP 600V 8A TO220F-2L | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 600V | 1.75V @ 8A | 27ns | 30µA @ 600V | -40°C ~ 150°C | 8A | - | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFRED® | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D-PAK (TO-252AA) | Standard | 600V | 1.7V @ 8A | 55ns | 5µA @ 600V | -55°C ~ 150°C | 8A (DC) | - | ||||||
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Infineon Technologies | DIODE SCHOTTKY 600V 8A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 600V | 1.7V @ 8A | 0ns | 300µA @ 600V | -55°C ~ 175°C | 8A (DC) | 280pF @ 0V, 1MHz | |||||
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STMicroelectronics | DIODE GEN PURP 600V 8A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TURBOSWITCH™ | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | D2PAK | Standard | 600V | 1.75V @ 8A | 52ns | 100µA @ 600V | 150°C (Max) | 8A | - | ||||||
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STMicroelectronics | DIODE GEN PURP 600V 8A TO220AC | TO-220-2 | TURBOSWITCH™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 600V | 1.75V @ 8A | 52ns | 100µA @ 600V | 150°C (Max) | 8A | - | |||||
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STMicroelectronics | DIODE GEN PURP 600V 8A TO220AC | TO-220-2 Insulated, TO-220AC | TURBOSWITCH™ | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC ins | Standard | 600V | 1.75V @ 8A | 52ns | 100µA @ 600V | 150°C (Max) | 8A | - | |||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 8A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 8A | 0ns | 160µA @ 600V | 175°C (Max) | 8A (DC) | 291pF @ 1V, 1MHz | ||||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 8A | 0ns | 40µA @ 650V | 175°C (Max) | 8A (DC) | 400pF @ 1V, 1MHz |