- Manufacture :
- Package / Case :
- Mounting Type :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 4A | 0ns | 20µA @ 650V | 175°C (Max) | 4A (DC) | 200pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 4A TO220-2 | TO-220-2 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 650V | 1.5V @ 4A | 0ns | 20µA @ 650V | 175°C (Max) | 4A (DC) | 200pF @ 1V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 650V DIE | Die | - | Surface Mount | Active | Die | Standard | 650V | 2.9V @ 25A | - | 1µA @ 650V | 175°C (Max) | - | - | |||||
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ON Semiconductor | DIODE GEN PURP 650V DIE | Die | Bulk | - | Surface Mount | Active | Die | Standard | 650V | 2.9V @ 25A | - | 1µA @ 650V | 175°C (Max) | - | - | ||||
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ON Semiconductor | DIODE GEN PURP 650V DIE | Die | - | Surface Mount | Active | Die | Standard | 650V | 2.8V @ 30A | - | 1µA @ 650V | 175°C (Max) | - | - | |||||
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ON Semiconductor | DIODE GEN PURP 650V DIE | Die | Bulk | - | Surface Mount | Active | Die | Standard | 650V | 2.8V @ 30A | - | 1µA @ 650V | 175°C (Max) | - | - | ||||
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ON Semiconductor | DIODE GEN PURP 650V DIE | Die | - | Surface Mount | Active | Die | Standard | 650V | 1.3V @ 20A | - | 1µA @ 650V | 175°C (Max) | - | - | |||||
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ON Semiconductor | DIODE GEN PURP 650V DIE | Die | Bulk | - | Surface Mount | Active | Die | Standard | 650V | 1.3V @ 20A | - | 1µA @ 650V | 175°C (Max) | - | - | ||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 4A | 0ns | 20µA @ 650V | 175°C (Max) | 4A (DC) | 200pF @ 1V, 1MHz |