- Series :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
35 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 4A | 0ns | 20µA @ 650V | 175°C (Max) | 4A (DC) | 200pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 4A TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 650V | 1.5V @ 4A | 0ns | 20µA @ 650V | 175°C (Max) | 4A (DC) | 200pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SILICON 650V 20A TO247 | TO-247-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247 | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A | 730pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1200V 10A TO247 | TO-247-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247 | Silicon Carbide Schottky | 1200V | - | 0ns | - | 175°C (Max) | 10A (DC) | - | ||||
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ROHM Semiconductor | DIODE SILICON 650V 15A TO247 | TO-247-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247 | Silicon Carbide Schottky | 650V | 1.55V @ 15A | 0ns | 300µA @ 600V | 175°C (Max) | 15A | 550pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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6,268
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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ON Semiconductor | 650V 30A SIC SBD | TO-247-3 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 23A (DC) | 887pF @ 1V, 100kHz | ||||
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ON Semiconductor | 1200V 20A AUTO SIC SBD | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 1200V | - | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 15A (DC) | 612pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 20A SIC SBD | TO-247-3 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 13A (DC) | 575pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 16A SIC SBD | TO-247-3 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 11A (DC) | 463pF @ 1V, 100kHz |