- Package / Case :
- Mounting Type :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
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Central Semiconductor Corp | DIODE GEN PURP 20V 50MA DIE | Die | - | Tray | Small Signal =< 200mA (Io), Any Speed | Surface Mount | Active | Die | Standard | 20V | 1V @ 10mA | 600ns | 5pA @ 5V | -65°C ~ 125°C | 50mA (DC) | 1.3pF @ 0V, 1MHz | ||||
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ON Semiconductor | RF SCHOTTKY BARRIER DIODE | 2-XDFN | - | Small Signal =< 200mA (Io), Any Speed | Surface Mount | Active | 2-X2DFN (1x0.6) | Schottky | 2V | - | - | - | -55°C ~ 150°C | 50mA (DC) | 0.15pF @ 0V, 1MHz |