- Manufacture :
- Package / Case :
- Series :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ON Semiconductor | 1200V 20A AUTO SIC SBD | TO-247-2 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | - | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 30A (DC) | 1220pF @ 1V, 100KHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 30A TO247-2 | TO-247-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | 1.75V @ 20A | 0ns | 200µA @ 1200V | - | 30A (DC) | 1220pF @ 1V, 100KHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V 30A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 30A | - | 200µA @ 650V | -55°C ~ 175°C | 30A (DC) | 1705pF @ 1V, 100kHz | ||||
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Global Power Technologies Group | DIODE SCHOTTKY 650V 30A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 650V | 1.65V @ 10A | - | 100µA @ 650V | -55°C ~ 175°C | 30A (DC) | 527pF @ 1V, 1MHz |