- Package / Case :
- Series :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
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11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220AC | Silicon Carbide Schottky | 1200V | 1.75V @ 5A | 0ns | 100µA @ 1200V | 175°C (Max) | 5A (DC) | 325pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1200V 5A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 5A | 0ns | 100µA @ 1200V | 175°C (Max) | 5A (DC) | 270pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 5A | 0ns | 100µA @ 1200V | 175°C (Max) | 5A (DC) | 270pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SIC SCHKY 1.2KV 2A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A (DC) | 131pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SIC SCHKY 1.2KV 2A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A (DC) | 131pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SIC SCHKY 1.2KV 2A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A (DC) | 131pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SIC SCHKY 1.2KV 2A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A (DC) | 131pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SIC SCHKY 1.2KV 2A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A (DC) | 131pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SIC SCHKY 1.2KV 2A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A (DC) | 131pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SIC SCHKY 1.2KV 2A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-252 | Silicon Carbide Schottky | 1200V | 1.8V @ 2A | 0ns | 50µA @ 1200V | -55°C ~ 175°C | 5A (DC) | 131pF @ 1V, 1MHz | |||||
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 5A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Discontinued at Digi-Key | TO-220-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 5A | 0ns | 10µA @ 1200V | -55°C ~ 175°C | 5A (DC) | 317pF @ 1V, 1MHz |