- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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SMC Diode Solutions | DIODE SCHOTTKY 200V 3A DIE | Die | - | Tray | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Die | Schottky | 200V | 920mV @ 3A | - | 70µA @ 200V | 200°C (Max) | 3A (DC) | 60pF @ 5V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY 30V 3A DIE | Die | - | Tray | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Die | Schottky | 30V | 490mV @ 3A | - | 400µA @ 30V | 150°C (Max) | 3A (DC) | 220pF @ 5V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY 200V 3A DIE | Die | - | Tray | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Die | Schottky | 200V | 920mV @ 3A | - | 70µA @ 200V | 200°C (Max) | 3A (DC) | 60pF @ 5V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY 30V 3A DIE | Die | - | Tray | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Die | Schottky | 30V | 490mV @ 3A | - | 400µA @ 30V | 150°C (Max) | 3A (DC) | 220pF @ 5V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | TO-257-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-257 | Silicon Carbide Schottky | 1200V | 1.6V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 250°C | 9.4A (DC) | 884pF @ 1V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 300V 3A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | DPAK | Standard | 300V | 1.15V @ 3A | 50ns | 5µA @ 300V | -55°C ~ 175°C | 3A (DC) | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 3A SMB | DO-214AA, SMB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SMB | Standard | 600V | 1.25V @ 3A | 75ns | 30µA @ 300V | -65°C ~ 175°C | 3A (DC) | - | |||||
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 24A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 8A | 0ns | 20µA @ 1200V | -50°C ~ 175°C | 24A (DC) | 508pF @ 1V, 1MHz | ||||
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Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 3A DO214AC | DO-214AC, SMA | Automotive, AEC-Q101, TMBS® | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | DO-214AC (SMA) | Schottky | 100V | 800mV @ 3A | - | 150µA @ 100V | -40°C ~ 150°C | 3A (DC) | 175pF @ 4V, 1MHz | ||||
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 10A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 175°C | 10A | 635pF @ 1V, 1MHz | ||||
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 10A TO247-2 | TO-247-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 20µA @ 1200V | -55°C ~ 175°C | 10A | 635pF @ 1V, 1MHz |