- Manufacture :
- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
32 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ON Semiconductor | 650V 30A SIC SBD | TO-247-3 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 23A (DC) | 887pF @ 1V, 100kHz | |||||
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ON Semiconductor | 650V 20A SIC SBD | TO-247-3 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 13A (DC) | 575pF @ 1V, 100kHz | |||||
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ON Semiconductor | 650V 16A SIC SBD | TO-247-3 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 11A (DC) | 463pF @ 1V, 100kHz | |||||
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ON Semiconductor | 650V 8A SIC SBD | TO-220-2 Full Pack | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | 1.75V @ 8A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 8A (DC) | 463pF @ 1V, 100kHz | |||||
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ON Semiconductor | 650V 8A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D-PAK (TO-252) | Silicon Carbide Schottky | 650V | 1.75V @ 8A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 15A (DC) | 463pF @ 1V, 100kHz | |||||
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ON Semiconductor | 650V 6A SIC SBD | TO-220-2 Full Pack | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 6A (DC) | 361pF @ 1V, 100kHz | |||||
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ON Semiconductor | 650V 6A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D-PAK (TO-252) | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 11A (DC) | 361pF @ 1V, 100kHz | |||||
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ON Semiconductor | DIODE GEN PURP 400V 3A DO201AD | DO-201AD, Axial | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Standard | 400V | 1.25V @ 3A | 50ns | 5µA @ 400V | -65°C ~ 150°C | 3A | 75pF @ 4V, 1MHz | ||||||
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ON Semiconductor | DIODE GEN PURP 800V 3A DO201AD | DO-201AD, Axial | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Standard | 800V | 1.7V @ 3A | 75ns | 5µA @ 800V | -65°C ~ 150°C | 3A | 75pF @ 4V, 1MHz | ||||||
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ON Semiconductor | DIODE SCHOTTKY 650V TO220-2 | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 8.8A (DC) | 361pF @ 1V, 100kHz | |||||
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ON Semiconductor | 650V 10A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | No Recovery Time > 500mA (Io) | Surface Mount | Active | D-PAK (TO-252) | Silicon Carbide Schottky | 650V | 1.75V @ 10A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 18A (DC) | 575pF @ 1V, 100kHz | ||||||
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ON Semiconductor | DIODE GEN PURP 300V 3A DO201AD | DO-201AD, Axial | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Standard | 300V | 1.25V @ 3A | 50ns | 5µA @ 300V | -65°C ~ 150°C | 3A | 75pF @ 4V, 1MHz | ||||||
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ON Semiconductor | DIODE GEN PURP 600V 3A DO201AD | DO-201AD, Axial | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Standard | 600V | 1.7V @ 3A | 75ns | 5µA @ 600V | -65°C ~ 150°C | 3A | 75pF @ 4V, 1MHz | ||||||
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ON Semiconductor | 650V 50A SIC SBD | TO-247-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 650V | 1.75V @ 50A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 60A (DC) | 2530pF @ 1V, 100kHz | |||||
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ON Semiconductor | 650V 30A SIC SBD | TO-247-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 26A (DC) | 1705pF @ 1V, 100kHz | |||||
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ON Semiconductor | DIODE SCHOTTKY 650V 30A TO220-2 | TO-220-2 | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 30A | - | 200µA @ 650V | -55°C ~ 175°C | 30A (DC) | 1705pF @ 1V, 100kHz | |||||
|
ON Semiconductor | 650V 20A SIC SBD | TO-247-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 25A (DC) | 1085pF @ 1V, 100kHz | |||||
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ON Semiconductor | 650V 20A SIC SBD | TO-220-2 Full Pack | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 20A (DC) | 1085pF @ 1V, 100kHz | |||||
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ON Semiconductor | DIODE SCHOTTKY 650V 25A TO220-2 | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 650V | 1.75V @ 20A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 25A (DC) | 1085pF @ 1V, 100kHz | |||||
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ON Semiconductor | 650V 16A SIC SBD | TO-247-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 150°C | 23A (DC) | 887pF @ 1V, 100kHz | |||||
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ON Semiconductor | DIODE SCHOTTKY 650V 16A TO220-2 | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 650V | 1.75V @ 16A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 16A (DC) | 887pF @ 1V, 100kHz | |||||
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ON Semiconductor | DIODE SCHOTTKY 650V 15A TO220-2 | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 12A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 15A (DC) | 665pF @ 1V, 100kHz | |||||
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ON Semiconductor | 650V 10A SIC SBD | TO-220-2 Full Pack | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 10A (DC) | 575pF @ 1V, 100kHz | |||||
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ON Semiconductor | DIODE SCHOTTKY 650V 15A TO220-2 | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 10A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 15A (DC) | 575pF @ 1V, 100kHz | |||||
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ON Semiconductor | DIODE SCHOTTKY 650V 13A TO220-2 | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 650V | 1.75V @ 8A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 13A (DC) | 463pF @ 1V, 100kHz | |||||
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Diodes Incorporated | DIODE SCHOTTKY 60V 2A SMA | DO-214AC, SMA | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SMA | Schottky | 60V | 650mV @ 2A | - | 200µA @ 60V | -55°C ~ 150°C | 2A | 75pF @ 4V, 1MHz | ||||||
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ON Semiconductor | DIODE SCHOTTKY 650V TO220-2 | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 8.8A (DC) | 361pF @ 1V, 100kHz | |||||
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Diodes Incorporated | DIODE SCHOTTKY 60V 2A SOD123F | SOD-123F | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount, MLCC | Active | SOD-123F | Schottky | 60V | 650mV @ 2A | - | 200µA @ 60V | -55°C ~ 150°C | 2A | 75pF @ 4V, 1MHz | ||||||
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ON Semiconductor | DIODE SCHOTTKY 650V 25A TO220-2 | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 650V | 1.75V @ 20A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 25A (DC) | 1085pF @ 1V, 100kHz | |||||
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ON Semiconductor | DIODE SCHOTTKY 650V 16A TO220-2 | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2 | Silicon Carbide Schottky | 650V | 1.75V @ 16A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 16A (DC) | 887pF @ 1V, 100kHz |