- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE SCHOTTKY 1200V 20A TO220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 20A | 0ns | 400µA @ 1200V | 175°C (Max) | 20A (DC) | 1060pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | - | 0ns | 100µA @ 650V | 175°C (Max) | 20A (DC) | 1000pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 20A | 0ns | 400µA @ 1200V | 175°C (Max) | 20A (DC) | 1060pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 20A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A (DC) | 730pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 20A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A (DC) | 730pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 20A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A (DC) | 730pF @ 1V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 400V 3A DO201AD | DO-201AD, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Standard | 400V | 1.25V @ 3A | 50ns | 5µA @ 400V | -65°C ~ 150°C | 3A | 75pF @ 4V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 800V 3A DO201AD | DO-201AD, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Standard | 800V | 1.7V @ 3A | 75ns | 5µA @ 800V | -65°C ~ 150°C | 3A | 75pF @ 4V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 300V 3A DO201AD | DO-201AD, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Standard | 300V | 1.25V @ 3A | 50ns | 5µA @ 300V | -65°C ~ 150°C | 3A | 75pF @ 4V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 600V 3A DO201AD | DO-201AD, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | DO-201AD | Standard | 600V | 1.7V @ 3A | 75ns | 5µA @ 600V | -65°C ~ 150°C | 3A | 75pF @ 4V, 1MHz | |||||
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ON Semiconductor | 650V 20A SIC SBD | TO-220-2 Full Pack | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 20A (DC) | 1085pF @ 1V, 100kHz | ||||
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Diodes Incorporated | DIODE SCHOTTKY 60V 2A SMA | DO-214AC, SMA | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | SMA | Schottky | 60V | 650mV @ 2A | - | 200µA @ 60V | -55°C ~ 150°C | 2A | 75pF @ 4V, 1MHz | |||||
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Diodes Incorporated | DIODE SCHOTTKY 60V 2A SOD123F | SOD-123F | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount, MLCC | Active | SOD-123F | Schottky | 60V | 650mV @ 2A | - | 200µA @ 60V | -55°C ~ 150°C | 2A | 75pF @ 4V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | - | 0ns | 100µA @ 650V | 175°C (Max) | 20A (DC) | 1000pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 20A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A (DC) | 730pF @ 1V, 1MHz |