- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE GEN PURP 430V 10A LPDS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | LPDS | Standard | 430V | 1.7V @ 10A | 25ns | 10µA @ 430V | 150°C (Max) | 10A | - | |||||
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ROHM Semiconductor | FAST RECOVERY DIODES (CORRESPOND | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | LPDS | Standard | 430V | 1.7V @ 10A | 25ns | 10µA @ 430V | 150°C (Max) | 10A | 150pF @ 0V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 10A | 0ns | 50µA @ 650V | 175°C (Max) | 10A (DC) | 500pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 Full Pack | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220FM | Silicon Carbide Schottky | 650V | 1.5V @ 10A | 0ns | 50µA @ 650V | 175°C (Max) | 10A (DC) | 500pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SC SCHKY 650V 10A TO220ACP | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 650V | 1.5V @ 10A | 0ns | 50µA @ 650V | 175°C (Max) | 10A (DC) | 500pF @ 1V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 Full Pack, Isolated Tab | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | ITO-220AC | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 100µA @ 650V | -55°C ~ 175°C | 10A | 695pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 100µA @ 650V | -55°C ~ 175°C | 10A | 695pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 Full Pack, Isolated Tab | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | ITO-220AC | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 100µA @ 650V | -55°C ~ 175°C | 10A | 695pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 100µA @ 650V | -55°C ~ 175°C | 10A | 695pF @ 0V, 1MHz | ||||
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Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 1200V | 1.7V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 500pF @ 1V, 1MHz | ||||
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Central Semiconductor Corp | DIODE SCHOTTKY 650V 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | DPAK | Schottky | 650V | 1.7V @ 10A | - | 125µA @ 650V | -55°C ~ 175°C | 10A | 28pF @ 600V, 1MHz | |||||
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Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 1200V | 1.7V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 500pF @ 1V, 1MHz | |||||
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Central Semiconductor Corp | DIODE SCHOTTKY 650V 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 125µA @ 650V | -55°C ~ 175°C | 10A (DC) | 325pF @ 1V, 1MHz | ||||
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Central Semiconductor Corp | DIODE GEN PURP 600V 10A TLM364 | 3-SMD, Flat Leads | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TLM364 | Standard | 600V | 1.7V @ 10A | 25ns | 10µA @ 600V | -65°C ~ 175°C | 10A | 42pF @ 4V, 1MHz | |||||
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ON Semiconductor | 650V 20A SIC SBD GEN1.5 | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 10A (DC) | 421pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 20A SIC SBD GEN1.5 | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 10A (DC) | 421pF @ 1V, 100kHz | ||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 10A | 0ns | 50µA @ 650V | 175°C (Max) | 10A (DC) | 500pF @ 1V, 1MHz |