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Packaging :
Supplier Device Package :
Voltage - DC Reverse (Vr) (Max) :
Voltage - Forward (Vf) (Max) @ If :
Reverse Recovery Time (trr) :
Current - Reverse Leakage @ Vr :
Operating Temperature - Junction :
Current - Average Rectified (Io) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Packaging Speed Mounting Type Part Status Supplier Device Package Diode Type Voltage - DC Reverse (Vr) (Max) Voltage - Forward (Vf) (Max) @ If Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Current - Average Rectified (Io) Capacitance @ Vr, F
BA5929FP
Per Unit
$6.1600
RFQ
ROHM Semiconductor SHORTER RECOVERY TIME, ENABLING TO-220-2 - No Recovery Time > 500mA (Io) Through Hole Active TO-220ACP Silicon Carbide Schottky 650V 1.5V @ 10A 0ns 50µA @ 650V 175°C (Max) 10A (DC) 500pF @ 1V, 1MHz
AMPI10048R2MT
Per Unit
$5.2400
RFQ
ROHM Semiconductor DIODE SC SCHKY 650V 10A TO220ACP TO-220-2 Tube No Recovery Time > 500mA (Io) Through Hole Active - Silicon Carbide Schottky 650V 1.5V @ 10A 0ns 50µA @ 650V 175°C (Max) 10A (DC) 500pF @ 1V, 1MHz
DS90LV047ATMC
Per Unit
$2.5400
RFQ
ON Semiconductor DIODE GEN PURP 600V 30A TO220AC TO-220-2 Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Active TO-220AC Standard 600V 1.5V @ 30A 60ns 250µA @ 600V -55°C ~ 175°C 30A -
SCS310AHGC9
Per Unit
$6.1600
RFQ
ROHM Semiconductor SHORTER RECOVERY TIME, ENABLING TO-220-2 - No Recovery Time > 500mA (Io) Through Hole Active TO-220ACP Silicon Carbide Schottky 650V 1.5V @ 10A 0ns 50µA @ 650V 175°C (Max) 10A (DC) 500pF @ 1V, 1MHz
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