- Manufacture :
- Package / Case :
- Series :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Reverse Recovery Time (trr) :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Central Semiconductor Corp | DIODE GEN PURP 20V 50MA DIE | Die | - | Tray | Small Signal =< 200mA (Io), Any Speed | Surface Mount | Active | Die | Standard | 20V | 1V @ 10mA | 600ns | 5pA @ 5V | -65°C ~ 125°C | 50mA (DC) | 1.3pF @ 0V, 1MHz | |||||
|
ON Semiconductor | RF SCHOTTKY BARRIER DIODE | 2-XDFN | - | Small Signal =< 200mA (Io), Any Speed | Surface Mount | Active | 2-X2DFN (1x0.6) | Schottky | 2V | - | - | - | -55°C ~ 150°C | 50mA (DC) | 0.15pF @ 0V, 1MHz | ||||||
|
ON Semiconductor | DIODE SCHOTTKY 100V 10A TO277-3 | TO-277, 3-PowerDFN | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TO-277-3 | Schottky | 100V | 670mV @ 10A | 22.94ns | 60µA @ 100V | -55°C ~ 150°C | 10A | 796pF @ 4V, 1MHz |