- Package / Case :
- Series :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Microsemi Corporation | DIODE GEN PURP 400V 400MA DO35 | DO-204AH, DO-35, Axial | Military, MIL-PRF-19500/240 | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-35 | Standard | 400V | 1V @ 400mA | - | 50nA @ 400V | -65°C ~ 175°C | 400mA | - | ||||
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Microsemi Corporation | DIODE GEN PURP 225V 400MA DO35 | DO-204AH, DO-35, Axial | Military, MIL-PRF-19500/240 | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-35 | Standard | 225V | 1V @ 400mA | - | 50nA @ 225V | -65°C ~ 175°C | 400mA | - | ||||
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Microsemi Corporation | DIODE GEN PURP 75V 1A AXIAL | A, Axial | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | - | Standard | 75V | 875mV @ 1A | 25ns | 1µA @ 75V | -65°C ~ 175°C | 1A | 25pF @ 10V, 1MHz | ||||
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Microsemi Corporation | DIODE GEN PURP 300V 60A TO247 | TO-247-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247 | Standard | 300V | 1.4V @ 60A | 38ns | 250µA @ 300V | -55°C ~ 175°C | 60A | - | ||||
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Microsemi Corporation | DIODE SCHOTTKY 20V 75MA DO35 | DO-204AH, DO-35, Axial | - | Bulk | Small Signal =< 200mA (Io), Any Speed | Through Hole | Active | DO-35 (DO-204AH) | Schottky | 20V | 1V @ 35mA | - | 150nA @ 16V | -65°C ~ 150°C | 75mA | 2pF @ 0V, 1MHz | ||||
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Microsemi Corporation | DIODE GEN PURP 400V 1A AXIAL | A, Axial | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 400V | 1.25V @ 1A | 50ns | 10µA @ 400V | -55°C ~ 150°C | 1A | - |