- Manufacture :
- Package / Case :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Reverse Recovery Time (trr) :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
18 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Sanken | DIODE GEN PURP 800V 1.1A AXIAL | Axial | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | - | Standard | 800V | 1.5V @ 1A | 400ns | 10µA @ 600V | -40°C ~ 150°C | 1.1A | - | |||||
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Sanken | DIODE GEN PURP 200V 1A AXIAL | Axial | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | - | Standard | 200V | 1.5V @ 1A | 400ns | 10µA @ 200V | -40°C ~ 150°C | 1A | - | |||||
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Sanken | DIODE GEN PURP 1KV 800MA AXIAL | Axial | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | - | Standard | 1000V | 1.5V @ 1A | 400ns | 10µA @ 1000V | -40°C ~ 150°C | 800mA | - | |||||
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Sanken | DIODE GEN PURP 800V 1A AXIAL | Axial | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | - | Standard | 800V | 1.5V @ 1A | 400ns | 10µA @ 800V | -40°C ~ 150°C | 1A | - | |||||
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Sanken | DIODE GEN PURP 600V 1A AXIAL | Axial | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | - | Standard | 600V | 1.5V @ 1A | 400ns | 10µA @ 600V | -40°C ~ 150°C | 1A | - | |||||
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Sanken | DIODE GEN PURP 800V 1.1A AXIAL | Axial | - | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 800V | 1.5V @ 1A | 400ns | 10µA @ 600V | -40°C ~ 150°C | 1.1A | - | |||||
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Sanken | DIODE GEN PURP 800V 1.1A AXIAL | Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 800V | 1.5V @ 1A | 400ns | 10µA @ 600V | -40°C ~ 150°C | 1.1A | - | ||||||
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Sanken | DIODE GEN PURP 1KV 800MA AXIAL | Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 1000V | 1.5V @ 1A | 400ns | 10µA @ 1000V | -40°C ~ 150°C | 800mA | - | ||||||
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Sanken | DIODE GEN PURP 1KV 800MA AXIAL | Axial | - | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | - | Standard | 1000V | 1.5V @ 1A | 400ns | 10µA @ 1000V | -40°C ~ 150°C | 800mA | - | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | |||||
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | TO-276AA | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-276 | Silicon Carbide Schottky | 650V | 1.5V @ 1A | 0ns | 5µA @ 650V | -55°C ~ 250°C | 1A | 76pF @ 1V, 1MHz | |||||
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STMicroelectronics | DIODE GEN PURP 400V 1A DO41 | DO-204AL, DO-41, Axial | - | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 400V | 1.5V @ 1A | 30ns | 5µA @ 400V | 175°C (Max) | 1A | - | |||||
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STMicroelectronics | DIODE SCHOTTKY 650V 8A TO220AC | TO-220-2 | Automotive, AEC-Q101, ECOPACK®2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.45V @ 8A | 0ns | 105µA @ 650V | -40°C ~ 175°C | 8A | 540pF @ 0V, 1MHz |