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7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Speed Mounting Type Part Status Supplier Device Package Diode Type Voltage - DC Reverse (Vr) (Max) Voltage - Forward (Vf) (Max) @ If Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Current - Average Rectified (Io) Capacitance @ Vr, F
FAN7392
RFQ
ON Semiconductor DIODE GEN PURP 600V 80A TO218 TO-218-1 - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-218 Standard 600V 1.6V @ 80A 85ns 250µA @ 600V - 80A -
FAN7380MX-G
RFQ
ON Semiconductor DIODE GEN PURP 600V 150A TO218 TO-218-1 - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-218 Standard 600V 1.6V @ 150A 100ns 250µA @ 600V -65°C ~ 175°C 150A -
FAN7320B
RFQ
ON Semiconductor DIODE GEN PURP 600V 100A TO218 TO-218-1 - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-218 Standard 600V 1.6V @ 100A 100ns 250µA @ 600V -65°C ~ 175°C 100A -
RURU8060
RFQ
ON Semiconductor DIODE GEN PURP 600V 80A TO218 TO-218-1 - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-218 Standard 600V 1.6V @ 80A 85ns 250µA @ 600V - 80A -
RURU15060
RFQ
ON Semiconductor DIODE GEN PURP 600V 150A TO218 TO-218-1 - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-218 Standard 600V 1.6V @ 150A 100ns 250µA @ 600V -65°C ~ 175°C 150A -
RURU10060
RFQ
ON Semiconductor DIODE GEN PURP 600V 100A TO218 TO-218-1 - Tube Fast Recovery =< 500ns, > 200mA (Io) Through Hole Obsolete TO-218 Standard 600V 1.6V @ 100A 100ns 250µA @ 600V -65°C ~ 175°C 100A -
STPSC8065DY
Per Unit
$3.1200
RFQ
STMicroelectronics DIODE SCHOTTKY 650V 8A TO220AC TO-220-2 Automotive, AEC-Q101, ECOPACK®2 - No Recovery Time > 500mA (Io) Through Hole Active TO-220AC Silicon Carbide Schottky 650V 1.45V @ 8A 0ns 105µA @ 650V -40°C ~ 175°C 8A 540pF @ 0V, 1MHz
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