- Manufacture :
-
- Infineon Technologies (1)
- ON Semiconductor (10)
- ROHM Semiconductor (3)
- STMicroelectronics (2)
- WeEn Semiconductors (2)
- Microsemi Corporation (2)
- Central Semiconductor Corp (10)
- Powerex Inc. (1)
- Littelfuse Inc. (1)
- Vishay Semiconductor Diodes Division (7)
- SMC Diode Solutions (4)
- Global Power Technologies Group (1)
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
44 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220AC | Silicon Carbide Schottky | 1200V | 1.75V @ 5A | 0ns | 100µA @ 1200V | 175°C (Max) | 5A (DC) | 325pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1200V 5A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 5A | 0ns | 100µA @ 1200V | 175°C (Max) | 5A (DC) | 270pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 5A | 0ns | 100µA @ 1200V | 175°C (Max) | 5A (DC) | 270pF @ 1V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 Full Pack, Isolated Tab | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | ITO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 Full Pack, Isolated Tab | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | ITO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | ||||
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Central Semiconductor Corp | DIODE GEN PURP 225V 400MA DO41 | DO-204AL, DO-41, Axial | - | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 225V | 1V @ 400mA | - | 200nA @ 225V | -65°C ~ 150°C | 400mA | 11pF @ 12V, 1MHz | ||||
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Central Semiconductor Corp | DIODE GP 500V 400MA DO-41SP | DO-204AL, DO-41, Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 500V | 1V @ 400mA | - | 200nA @ 500V | -65°C ~ 150°C | 400mA | 11pF @ 12V, 1MHz | ||||
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Central Semiconductor Corp | DIODE GP 400V 400MA DO-41SP | DO-204AL, DO-41, Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 400V | 1V @ 400mA | - | 200nA @ 400V | -65°C ~ 150°C | 400mA | 11pF @ 12V, 1MHz | ||||
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Central Semiconductor Corp | DIODE GP 300V 400MA DO-41SP | DO-204AL, DO-41, Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 300V | 1V @ 400mA | - | 200nA @ 300V | -65°C ~ 150°C | 400mA | 11pF @ 12V, 1MHz | ||||
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Central Semiconductor Corp | DIODE GP 500V 400MA DO-41SP | DO-204AL, DO-41, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 500V | 1V @ 400mA | - | 200nA @ 500V | -65°C ~ 150°C | 400mA | 11pF @ 12V, 1MHz | |||||
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Central Semiconductor Corp | DIODE GP 400V 400MA DO-41SP | DO-204AL, DO-41, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 400V | 1V @ 400mA | - | 200nA @ 400V | -65°C ~ 150°C | 400mA | 11pF @ 12V, 1MHz | |||||
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Central Semiconductor Corp | DIODE GP 300V 400MA DO-41SP | DO-204AL, DO-41, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 300V | 1V @ 400mA | - | 200nA @ 300V | -65°C ~ 150°C | 400mA | 11pF @ 12V, 1MHz | |||||
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Central Semiconductor Corp | DIODE GP 600V 400MA DO-41SP | DO-204AL, DO-41, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 600V | 1V @ 400mA | - | 200nA @ 600V | -65°C ~ 150°C | 400mA | 11pF @ 12V, 1MHz | |||||
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Central Semiconductor Corp | DIODE GP 600V 400MA DO-41SP | DO-204AL, DO-41, Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 600V | 1V @ 400mA | - | 200nA @ 600V | -65°C ~ 150°C | 400mA | 11pF @ 12V, 1MHz | ||||
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Central Semiconductor Corp | DIODE GEN PURP 225V 400MA DO41 | DO-204AL, DO-41, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 225V | 1V @ 400mA | - | 200nA @ 225V | -65°C ~ 150°C | 400mA | 11pF @ 12V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 18A TO220AC | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 1200V | 3.3V @ 18A | 70ns | 100µA @ 1200V | -55°C ~ 150°C | 18A | - | ||||
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2,445
In-stock
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ON Semiconductor | DIODE GEN PURP 1.2KV 8A TO220-2L | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2L | Standard | 1200V | 3.3V @ 8A | 300ns | 100µA @ 1200V | -55°C ~ 150°C | 8A | 30pF @ 10V, 1MHz | |||
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ON Semiconductor | DIODE GEN PURP 1.2KV 8A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2 | Standard | 1200V | 3.2V @ 8A | 70ns | 100µA @ 1200V | -65°C ~ 175°C | 8A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 15A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2 | Standard | 1200V | 3.2V @ 15A | 75ns | 100µA @ 1200V | -65°C ~ 175°C | 15A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 18A TO247 | TO-247-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 1200V | 3.3V @ 18A | 70ns | 100µA @ 1200V | -55°C ~ 150°C | 18A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 8A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Standard | 1200V | 3.2V @ 8A | 70ns | 100µA @ 1200V | -65°C ~ 175°C | 8A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 15A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Standard | 1200V | 3.2V @ 15A | 75ns | 100µA @ 1200V | -65°C ~ 175°C | 15A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 30A TO247 | TO-247-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 1200V | 3.3V @ 30A | 100ns | 100µA @ 1200V | -55°C ~ 150°C | 30A | - | ||||
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WeEn Semiconductors | BYC15-1200PQ/TO-220AC/STANDARD M | TO-220-2 | - | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 1200V | 3.2V @ 15A | 61ns | 100µA @ 1200V | 175°C (Max) | 15A | - | ||||
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WeEn Semiconductors | BYC8-1200PQ/TO-220AC/STANDARD MA | TO-220-2 | - | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 1200V | 3.2V @ 8A | 55ns | 100µA @ 1200V | 175°C (Max) | 8A | - | ||||
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Microsemi Corporation | DIODE GEN PURP 400V 400MA DO35 | DO-204AH, DO-35, Axial | Military, MIL-PRF-19500/240 | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-35 | Standard | 400V | 1V @ 400mA | - | 50nA @ 400V | -65°C ~ 175°C | 400mA | - | ||||
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Microsemi Corporation | DIODE GEN PURP 225V 400MA DO35 | DO-204AH, DO-35, Axial | Military, MIL-PRF-19500/240 | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | DO-35 | Standard | 225V | 1V @ 400mA | - | 50nA @ 225V | -65°C ~ 175°C | 400mA | - | ||||
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 8A TO220-2 | TO-220-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | TO-220-2 | Silicon Carbide Schottky | 1200V | 1.7V @ 8A | 0ns | 100µA @ 1200V | -55°C ~ 135°C | 8A | 477pF @ 1V, 1MHz |