- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
33 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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6,268
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 600V | 1.6V @ 1A | 0ns | 5µA @ 600V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 100V | 1.6V @ 1A | 0ns | 5µA @ 100V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | TO-206AB, TO-46-3 Metal Can | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-46 | Silicon Carbide Schottky | 300V | 1.6V @ 1A | 0ns | 5µA @ 300V | -55°C ~ 225°C | 4A (DC) | 76pF @ 1V, 1MHz | |||||
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Central Semiconductor Corp | DIODE GEN PURP 225V 400MA DO41 | DO-204AL, DO-41, Axial | - | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 225V | 1V @ 400mA | - | 200nA @ 225V | -65°C ~ 150°C | 400mA | 11pF @ 12V, 1MHz | |||||
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Central Semiconductor Corp | DIODE GP 500V 400MA DO-41SP | DO-204AL, DO-41, Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 500V | 1V @ 400mA | - | 200nA @ 500V | -65°C ~ 150°C | 400mA | 11pF @ 12V, 1MHz | |||||
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Central Semiconductor Corp | DIODE GP 400V 400MA DO-41SP | DO-204AL, DO-41, Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 400V | 1V @ 400mA | - | 200nA @ 400V | -65°C ~ 150°C | 400mA | 11pF @ 12V, 1MHz | |||||
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Central Semiconductor Corp | DIODE GP 300V 400MA DO-41SP | DO-204AL, DO-41, Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 300V | 1V @ 400mA | - | 200nA @ 300V | -65°C ~ 150°C | 400mA | 11pF @ 12V, 1MHz | |||||
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Central Semiconductor Corp | DIODE GP 500V 400MA DO-41SP | DO-204AL, DO-41, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 500V | 1V @ 400mA | - | 200nA @ 500V | -65°C ~ 150°C | 400mA | 11pF @ 12V, 1MHz | ||||||
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Central Semiconductor Corp | DIODE GP 400V 400MA DO-41SP | DO-204AL, DO-41, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 400V | 1V @ 400mA | - | 200nA @ 400V | -65°C ~ 150°C | 400mA | 11pF @ 12V, 1MHz | ||||||
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Central Semiconductor Corp | DIODE GP 300V 400MA DO-41SP | DO-204AL, DO-41, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 300V | 1V @ 400mA | - | 200nA @ 300V | -65°C ~ 150°C | 400mA | 11pF @ 12V, 1MHz | ||||||
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Central Semiconductor Corp | DIODE GP 600V 400MA DO-41SP | DO-204AL, DO-41, Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 600V | 1V @ 400mA | - | 200nA @ 600V | -65°C ~ 150°C | 400mA | 11pF @ 12V, 1MHz | ||||||
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Central Semiconductor Corp | DIODE GP 600V 400MA DO-41SP | DO-204AL, DO-41, Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-41 | Standard | 600V | 1V @ 400mA | - | 200nA @ 600V | -65°C ~ 150°C | 400mA | 11pF @ 12V, 1MHz |