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Packaging :
Supplier Device Package :
Voltage - DC Reverse (Vr) (Max) :
Voltage - Forward (Vf) (Max) @ If :
Reverse Recovery Time (trr) :
Current - Reverse Leakage @ Vr :
Operating Temperature - Junction :
Current - Average Rectified (Io) :
11 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Speed Mounting Type Part Status Supplier Device Package Diode Type Voltage - DC Reverse (Vr) (Max) Voltage - Forward (Vf) (Max) @ If Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Current - Average Rectified (Io) Capacitance @ Vr, F
TDA8070M/C2
Per Unit
$192.5700
RFQ
GeneSiC Semiconductor DIODE SCHOTTKY 650V 2.5A TO257 TO-257-3 - Tube No Recovery Time > 500mA (Io) Through Hole Active TO-257 Silicon Carbide Schottky 650V 1.3V @ 2.5A 0ns 5µA @ 650V -55°C ~ 250°C 2.5A 274pF @ 1V, 1MHz
P87C51FB-5A
Per Unit
$385.1400
RFQ
6,287
In-stock
GeneSiC Semiconductor DIODE SCHOTTKY 650V 2.5A TO257 TO-257-3 - Tube No Recovery Time > 500mA (Io) Through Hole Active TO-257 Silicon Carbide Schottky 650V 1.3V @ 2.5A 0ns 5µA @ 650V -55°C ~ 250°C 2.5A 274pF @ 1V, 1MHz
MC13281AP
Per Unit
$192.5700
RFQ
GeneSiC Semiconductor DIODE SCHOTTKY 650V 2.5A TO257 TO-257-3 - Tube No Recovery Time > 500mA (Io) Through Hole Active TO-257 Silicon Carbide Schottky 650V 1.3V @ 2.5A 0ns 5µA @ 650V -55°C ~ 250°C 2.5A 274pF @ 1V, 1MHz
74LVT652D
Per Unit
$192.5700
RFQ
GeneSiC Semiconductor DIODE SCHOTTKY 650V 2.5A TO257 TO-257-3 - Tube No Recovery Time > 500mA (Io) Through Hole Active TO-257 Silicon Carbide Schottky 650V 1.3V @ 2.5A 0ns 5µA @ 650V -55°C ~ 250°C 2.5A 274pF @ 1V, 1MHz
TDA2654S
Per Unit
$192.5700
RFQ
GeneSiC Semiconductor DIODE SCHOTTKY 650V 2.5A TO257 TO-257-3 - Tube No Recovery Time > 500mA (Io) Through Hole Active TO-257 Silicon Carbide Schottky 650V 1.3V @ 2.5A 0ns 5µA @ 650V -55°C ~ 250°C 2.5A 274pF @ 1V, 1MHz
MOCD211R1
Per Unit
$192.5700
RFQ
GeneSiC Semiconductor DIODE SCHOTTKY 650V 2.5A TO257 TO-257-3 - Tube No Recovery Time > 500mA (Io) Through Hole Active TO-257 Silicon Carbide Schottky 650V 1.3V @ 2.5A 0ns 5µA @ 650V -55°C ~ 250°C 2.5A 274pF @ 1V, 1MHz
GTL2020DGG
Per Unit
$192.5700
RFQ
GeneSiC Semiconductor DIODE SCHOTTKY 650V 2.5A TO257 TO-257-3 - Tube No Recovery Time > 500mA (Io) Through Hole Active TO-257 Silicon Carbide Schottky 650V 1.3V @ 2.5A 0ns 5µA @ 650V -55°C ~ 250°C 2.5A 274pF @ 1V, 1MHz
TC9307AF-004
RFQ
Micro Commercial Co DIODE SCHOTTKY 40V 15MA DO35 DO-204AH, DO-35, Axial - Small Signal =< 200mA (Io), Any Speed Through Hole Obsolete DO-35 Schottky 40V 900mV @ 15mA 1ns 200nA @ 30V 125°C (Max) 15mA (DC) -
GS1G-TP-MS
RFQ
Micro Commercial Co DIODE SCHOTTKY 40V 15MA DO35 DO-204AH, DO-35, Axial - Small Signal =< 200mA (Io), Any Speed Through Hole Obsolete DO-35 Schottky 40V 900mV @ 15mA 1ns 200nA @ 30V 125°C (Max) 15mA (DC) -
TLP184GB-TPL.SE
RFQ
Micro Commercial Co DIODE SCHOTTKY 40V 15MA DO35 DO-204AH, DO-35, Axial - Small Signal =< 200mA (Io), Any Speed Through Hole Obsolete DO-35 Schottky 40V 900mV @ 15mA 1ns 200nA @ 30V 125°C (Max) 15mA (DC) -
RN1309
RFQ
Micro Commercial Co DIODE SCHOTTKY 40V 15MA DO35 DO-204AH, DO-35, Axial - Small Signal =< 200mA (Io), Any Speed Through Hole Obsolete DO-35 Schottky 40V 900mV @ 15mA 1ns 200nA @ 30V 125°C (Max) 15mA (DC) -
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