- Manufacture :
- Package / Case :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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SMC Diode Solutions | DIODE GEN PURP 600V 4A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 600V | 1.55V @ 4A | 50ns | 3µA @ 600V | -55°C ~ 150°C | 4A | - | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 Full Pack, Isolated Tab | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | ITO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE GEN PURP 600V 4A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 600V | 1.55V @ 4A | 50ns | 3µA @ 600V | -55°C ~ 150°C | 4A | - | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 Full Pack, Isolated Tab | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | ITO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 10A | 0ns | 100µA @ 1200V | -55°C ~ 175°C | 10A | 640pF @ 0V, 1MHz | ||||
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STMicroelectronics | DIODE GEN PURP 600V 4A DO201AD | DO-201AD, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 600V | 1.3V @ 3A | 75ns | 3µA @ 600V | 175°C (Max) | 4A | - |