- Package / Case :
- Series :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Semtech Corporation | DIODE GEN PURP 150V 3.3A AXIAL | Axial | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 150V | 875mV @ 1A | 25ns | 1µA @ 150V | -65°C ~ 175°C | 3.3A | 25pF @ 5V, 1MHz | ||||
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Semtech Corporation | DIODE GEN PURP 150V 2.5A AXIAL | Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 150V | 875mV @ 1A | 25ns | 1µA @ 150V | -65°C ~ 175°C | 2.5A | 25pF @ 5V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 8A | 0ns | 40µA @ 650V | 175°C (Max) | 8A (DC) | 400pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SC SCHKY 650V 8A TO220ACP | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 650V | 1.5V @ 8A | 0ns | 40µA @ 650V | 175°C (Max) | 8A (DC) | 400pF @ 1V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 150V 1A AXIAL | DO-204AL, DO-41, Axial | SWITCHMODE™ | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | Axial | Standard | 150V | 875mV @ 1A | 35ns | 2µA @ 150V | -65°C ~ 175°C | 1A | - | ||||
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ON Semiconductor | DIODE GEN PURP 100V 1A AXIAL | DO-204AL, DO-41, Axial | SWITCHMODE™ | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | Axial | Standard | 100V | 875mV @ 1A | 35ns | 2µA @ 100V | -65°C ~ 175°C | 1A | - | ||||
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ON Semiconductor | DIODE GEN PURP 50V 1A AXIAL | DO-204AL, DO-41, Axial | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | Axial | Standard | 50V | 875mV @ 1A | 35ns | 2µA @ 50V | -65°C ~ 175°C | 1A | - | |||||
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ON Semiconductor | DIODE GEN PURP 150V 1A AXIAL | DO-204AL, DO-41, Axial | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | Axial | Standard | 150V | 875mV @ 1A | 35ns | 2µA @ 150V | -65°C ~ 175°C | 1A | - | |||||
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ON Semiconductor | DIODE GEN PURP 100V 1A AXIAL | DO-204AL, DO-41, Axial | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | Axial | Standard | 100V | 875mV @ 1A | 35ns | 2µA @ 100V | -65°C ~ 175°C | 1A | - | |||||
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ON Semiconductor | DIODE GEN PURP 200V 1A AXIAL | DO-204AL, DO-41, Axial | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | Axial | Standard | 200V | 875mV @ 1A | 35ns | 2µA @ 200V | -65°C ~ 175°C | 1A | - | |||||
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ON Semiconductor | 650V 30A SIC SBD GEN1.5 | TO-247-2 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 650V | 1.7V @ 30A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 37A (DC) | 1260pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 20A SIC SBD GEN1.5 | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 10A (DC) | 421pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE GEN PURP 50V 1A AXIAL | DO-204AL, DO-41, Axial | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 50V | 875mV @ 1A | 35ns | 2µA @ 50V | -65°C ~ 175°C | 1A | - | |||||
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ON Semiconductor | DIODE GEN PURP 100V 1A AXIAL | DO-204AL, DO-41, Axial | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 100V | 875mV @ 1A | 35ns | 2µA @ 100V | -65°C ~ 175°C | 1A | - | |||||
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ON Semiconductor | DIODE GEN PURP 150V 1A AXIAL | DO-204AL, DO-41, Axial | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 150V | 875mV @ 1A | 35ns | 2µA @ 150V | -65°C ~ 175°C | 1A | - | |||||
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ON Semiconductor | DIODE GEN PURP 150V 1A AXIAL | DO-204AL, DO-41, Axial | SWITCHMODE™ | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 150V | 875mV @ 1A | 35ns | 2µA @ 150V | -65°C ~ 175°C | 1A | - | ||||
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ON Semiconductor | DIODE GEN PURP 50V 1A AXIAL | DO-204AL, DO-41, Axial | SWITCHMODE™ | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 50V | 875mV @ 1A | 35ns | 2µA @ 50V | -65°C ~ 175°C | 1A | - | ||||
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ON Semiconductor | DIODE GEN PURP 200V 1A AXIAL | DO-204AL, DO-41, Axial | SWITCHMODE™ | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 200V | 875mV @ 1A | 35ns | 2µA @ 200V | -65°C ~ 175°C | 1A | - | ||||
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ON Semiconductor | DIODE GEN PURP 100V 1A AXIAL | DO-204AL, DO-41, Axial | SWITCHMODE™ | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 100V | 875mV @ 1A | 35ns | 2µA @ 100V | -65°C ~ 175°C | 1A | - | ||||
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ON Semiconductor | DIODE GEN PURP 200V 1A AXIAL | DO-204AL, DO-41, Axial | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 200V | 875mV @ 1A | 35ns | 2µA @ 200V | -65°C ~ 175°C | 1A | - | |||||
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Microsemi Corporation | DIODE GEN PURP 75V 1A AXIAL | A, Axial | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | - | Standard | 75V | 875mV @ 1A | 25ns | 1µA @ 75V | -65°C ~ 175°C | 1A | 25pF @ 10V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 50V 1A AXIAL | DO-204AL, DO-41, Axial | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | Axial | Standard | 50V | 875mV @ 1A | 35ns | 2µA @ 50V | -65°C ~ 175°C | 1A | - | |||||
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ON Semiconductor | DIODE GEN PURP 150V 1A AXIAL | DO-204AL, DO-41, Axial | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | Axial | Standard | 150V | 875mV @ 1A | 35ns | 2µA @ 150V | -65°C ~ 175°C | 1A | - | |||||
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ON Semiconductor | DIODE GEN PURP 100V 1A AXIAL | DO-204AL, DO-41, Axial | SWITCHMODE™ | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | Axial | Standard | 100V | 875mV @ 1A | 35ns | 2µA @ 100V | -65°C ~ 175°C | 1A | - | |||||
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ON Semiconductor | 650V 20A SIC SBD GEN1.5 | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 10A (DC) | 421pF @ 1V, 100kHz | ||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 8A | 0ns | 40µA @ 650V | 175°C (Max) | 8A (DC) | 400pF @ 1V, 1MHz |