- Package / Case :
- Series :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 8A | 0ns | 40µA @ 650V | 175°C (Max) | 8A (DC) | 400pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SC SCHKY 650V 8A TO220ACP | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 650V | 1.5V @ 8A | 0ns | 40µA @ 650V | 175°C (Max) | 8A (DC) | 400pF @ 1V, 1MHz | ||||
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ON Semiconductor | 650V 30A SIC SBD GEN1.5 | TO-247-2 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 650V | 1.7V @ 30A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 37A (DC) | 1260pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 20A SIC SBD GEN1.5 | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 10A (DC) | 421pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE GEN PURP 600V 75A TO247-2 | TO-247-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 600V | 2.2V @ 75A | 75ns | 100µA @ 600V | -65°C ~ 175°C | 75A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 75A TO247 | TO-247-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247-2 | Standard | 1200V | 3.2V @ 75A | 100ns | 250µA @ 1200V | -65°C ~ 175°C | 75A | - | ||||
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ON Semiconductor | 650V 20A SIC SBD GEN1.5 | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 10A (DC) | 421pF @ 1V, 100kHz | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 75A TO247AD | TO-247-2 | FRED Pt® | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247AD | Standard | 1200V | 2.55V @ 75A | 265ns | 420µA @ 1200V | -55°C ~ 175°C | 75A | - | ||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 8A | 0ns | 40µA @ 650V | 175°C (Max) | 8A (DC) | 400pF @ 1V, 1MHz |