- Package / Case :
- Series :
- Packaging :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Semtech Corporation | DIODE GEN PURP 1KV 850MA AXIAL | Axial | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 1000V | 1.35V @ 1.5A | 300ns | 1µA @ 1000V | - | 850mA | 18pF @ 5V, 1MHz | ||||
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Semtech Corporation | DIODE GEN PURP 1KV 1A AXIAL | Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 1000V | 1.2V @ 1A | 2µs | 1µA @ 1000V | - | 1A (DC) | - | ||||
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Semtech Corporation | DIODE GEN PURP 1KV 1A AXIAL | Axial | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | - | Standard | 1000V | 2.1V @ 1A | 75ns | 1µA @ 1000V | - | 1A | 30pF @ 5V, 1MHz | ||||
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Semtech Corporation | DIODE GEN PURP 1KV 5A AXIAL | Axial | - | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 1000V | 1V @ 3A | 2µs | 1µA @ 1000V | - | 5A | 92pF @ 5V, 1MHz | |||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | TO-220-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | TO-220-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | TO-220-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | TO-220-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | TO-220-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | TO-220-2 | - | Bulk | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.8V @ 1A | 0ns | 2µA @ 1200V | -55°C ~ 175°C | 1A | 69pF @ 1V, 1MHz | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 1A DO204AL | DO-204AL, DO-41, Axial | SUPERECTIFIER® | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-204AL (DO-41) | Standard | 1000V | 1.3V @ 1A | 500ns | 1µA @ 1000V | -65°C ~ 175°C | 1A | 15pF @ 4V, 1MHz |