- Manufacture :
- Current - Reverse Leakage @ Vr :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ON Semiconductor | 1200V 50A SIC SBD | TO-247-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | Silicon Carbide Schottky | 1200V | - | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 77A (DC) | 2560pF @ 1V, 100kHz | |||||
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Global Power Technologies Group | DIODE SCHOTTKY 1.7KV 10A TO247-2 | TO-247-2 | Amp+™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | Silicon Carbide Schottky | 1700V | 1.75V @ 10A | 0ns | 20µA @ 1700V | -55°C ~ 175°C | 10A | 812pF @ 1V, 1MHz |