- Manufacture :
- Package / Case :
- Diode Type :
- Voltage - DC Reverse (Vr) (Max) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | Axial | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 8000V | 4.6V @ 50mA | 0ns | 3.8µA @ 8000V | -55°C ~ 175°C | 50mA (DC) | 25pF @ 1V, 1MHz | ||||
|
|
ON Semiconductor | DIODE GEN PURP 350V 40A TO3P | TO-3P-3, SC-65-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-3P | Standard | 350V | 1.6V @ 40A | 55ns | 100µA @ 350V | -65°C ~ 150°C | 40A | - |