- Series :
- Packaging :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Sanken | DIODE GEN PURP 400V 10A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 400V | 1.5V @ 10A | 25ns | 100µA @ 400V | -40°C ~ 150°C | 10A | - | ||||
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Semtech Corporation | DIODE GEN PURP 150V 3.3A AXIAL | Axial | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 150V | 875mV @ 1A | 25ns | 1µA @ 150V | -65°C ~ 175°C | 3.3A | 25pF @ 5V, 1MHz | ||||
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Semtech Corporation | DIODE GEN PURP 150V 2.5A AXIAL | Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 150V | 875mV @ 1A | 25ns | 1µA @ 150V | -65°C ~ 175°C | 2.5A | 25pF @ 5V, 1MHz | |||||
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ROHM Semiconductor | DIODE GEN PURP 200V 1A MSR | DO-41 Mini, Axial | - | Tape & Box (TB) | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | MSR | Standard | 200V | 870mV @ 1A | 25ns | 10µA @ 200V | 150°C (Max) | 1A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 10A TO220NFM | TO-220-2 | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | 2.8V @ 10A | 25ns | 10µA @ 600V | 150°C (Max) | 10A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 430V 20A TO220FN | TO-220-3 Full Pack | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220FN | Standard | 430V | 1.7V @ 20A | 25ns | 10µA @ 430V | 150°C (Max) | 20A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 5A TO220NFM | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | 2.8V @ 5A | 25ns | 10µA @ 600V | 150°C (Max) | 5A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 10A TO220NFM | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | 2.8V @ 10A | 25ns | 10µA @ 600V | 150°C (Max) | 10A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 4A TO220F | TO-220-2 Full Pack | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 600V | 2.6V @ 4A | 25ns | 100µA @ 600V | -65°C ~ 150°C | 4A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 4A TO220-2L | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2L | Standard | 600V | 2.6V @ 4A | 25ns | 100µA @ 600V | -65°C ~ 150°C | 4A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 8A TO220 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220AC | Standard | 600V | 3.6V @ 8A | 25ns | 10µA @ 600V | -65°C ~ 150°C | 8A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 8A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220F-2L | Standard | 600V | 3.4V @ 8A | 25ns | 100µA @ 600V | -65°C ~ 150°C | 8A | - | ||||
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Microsemi Corporation | DIODE GEN PURP 75V 1A AXIAL | A, Axial | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | - | Standard | 75V | 875mV @ 1A | 25ns | 1µA @ 75V | -65°C ~ 175°C | 1A | 25pF @ 10V, 1MHz | ||||
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Sanken | DIODE GEN PURP 400V 10A TO220F | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 400V | 1.5V @ 10A | 25ns | 100µA @ 400V | -40°C ~ 150°C | 10A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 4A TO220F | TO-220-2 Full Pack | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 600V | 2.6V @ 4A | 25ns | 100µA @ 600V | -65°C ~ 150°C | 4A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 4A TO220-2L | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2L | Standard | 600V | 2.6V @ 4A | 25ns | 100µA @ 600V | -65°C ~ 150°C | 4A | - | ||||
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STMicroelectronics | DIODE SCHOTTKY 20V 350MA DO35 | DO-204AH, DO-35, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | DO-35 | Schottky | 20V | 1V @ 300mA | - | 10µA @ 20V | -65°C ~ 125°C | 350mA (DC) | 20pF @ 0V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A TO220AC | TO-220-2 | FRED Pt® | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220AC | Standard | 600V | 2.4V @ 8A | 25ns | 50µA @ 600V | -65°C ~ 175°C | 8A | - | ||||
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Diodes Incorporated | DIODE SCHOTTKY 30V 350MA DO35 | DO-204AH, DO-35, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Discontinued at Digi-Key | DO-35 | Schottky | 30V | 600mV @ 200mA | 10ns | 5µA @ 20V | 125°C (Max) | 350mA (DC) | 50pF @ 0V, 1MHz |