- Manufacture :
- Package / Case :
- Part Status :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ON Semiconductor | 650V 6A SIC SBD | TO-220-2 Full Pack | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 6A (DC) | 361pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 8.8A (DC) | 361pF @ 1V, 100kHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 6A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 600V | 1.7V @ 6A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 6A (DC) | 300pF @ 0V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 6A TO220AB | TO-220-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | P-TO220AB | Silicon Carbide Schottky | 600V | 1.7V @ 6A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 6A (DC) | 300pF @ 0V, 1MHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 8.8A (DC) | 361pF @ 1V, 100kHz |