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Package / Case :
Packaging :
Voltage - DC Reverse (Vr) (Max) :
Voltage - Forward (Vf) (Max) @ If :
Current - Reverse Leakage @ Vr :
Current - Average Rectified (Io) :
8 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Speed Mounting Type Part Status Supplier Device Package Diode Type Voltage - DC Reverse (Vr) (Max) Voltage - Forward (Vf) (Max) @ If Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Current - Average Rectified (Io) Capacitance @ Vr, F
TDA6502ATS/C5
Per Unit
$3.7500
RFQ
GeneSiC Semiconductor DIODE SCHOTTKY 1.2KV 1A TO220AC TO-220-2 - Bulk No Recovery Time > 500mA (Io) Through Hole Active TO-220AC Silicon Carbide Schottky 1200V 1.8V @ 1A 0ns 2µA @ 1200V -55°C ~ 175°C 1A 69pF @ 1V, 1MHz
P10N10
Per Unit
$3.7500
RFQ
GeneSiC Semiconductor DIODE SCHOTTKY 1.2KV 1A TO220AC TO-220-2 - Bulk No Recovery Time > 500mA (Io) Through Hole Active TO-220AC Silicon Carbide Schottky 1200V 1.8V @ 1A 0ns 2µA @ 1200V -55°C ~ 175°C 1A 69pF @ 1V, 1MHz
MC10H171
Per Unit
$3.7500
RFQ
GeneSiC Semiconductor DIODE SCHOTTKY 1.2KV 1A TO220AC TO-220-2 - Bulk No Recovery Time > 500mA (Io) Through Hole Active TO-220AC Silicon Carbide Schottky 1200V 1.8V @ 1A 0ns 2µA @ 1200V -55°C ~ 175°C 1A 69pF @ 1V, 1MHz
74LVCH16374ADL+112
Per Unit
$3.7500
RFQ
GeneSiC Semiconductor DIODE SCHOTTKY 1.2KV 1A TO220AC TO-220-2 - Bulk No Recovery Time > 500mA (Io) Through Hole Active TO-220AC Silicon Carbide Schottky 1200V 1.8V @ 1A 0ns 2µA @ 1200V -55°C ~ 175°C 1A 69pF @ 1V, 1MHz
TDA1306T/N2
Per Unit
$3.7500
RFQ
GeneSiC Semiconductor DIODE SCHOTTKY 1.2KV 1A TO220AC TO-220-2 - Bulk No Recovery Time > 500mA (Io) Through Hole Active TO-220AC Silicon Carbide Schottky 1200V 1.8V @ 1A 0ns 2µA @ 1200V -55°C ~ 175°C 1A 69pF @ 1V, 1MHz
MJH16006
Per Unit
$3.7500
RFQ
GeneSiC Semiconductor DIODE SCHOTTKY 1.2KV 1A TO220AC TO-220-2 - Bulk No Recovery Time > 500mA (Io) Through Hole Active TO-220AC Silicon Carbide Schottky 1200V 1.8V @ 1A 0ns 2µA @ 1200V -55°C ~ 175°C 1A 69pF @ 1V, 1MHz
SDT06S60
RFQ
Infineon Technologies DIODE SCHOTTKY 600V 6A TO220-2 TO-220-2 CoolSiC™ Tube No Recovery Time > 500mA (Io) Through Hole Obsolete PG-TO220-2-2 Silicon Carbide Schottky 600V 1.7V @ 6A 0ns 200µA @ 600V -55°C ~ 175°C 6A (DC) 300pF @ 0V, 1MHz
SDP06S60
RFQ
Infineon Technologies DIODE SCHOTTKY 600V 6A TO220AB TO-220-3 - Tube No Recovery Time > 500mA (Io) Through Hole Obsolete P-TO220AB Silicon Carbide Schottky 600V 1.7V @ 6A 0ns 200µA @ 600V -55°C ~ 175°C 6A (DC) 300pF @ 0V, 1MHz
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