- Package / Case :
- Series :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Semtech Corporation | DIODE GEN PURP 600V 2A AXIAL | Axial | - | Bulk | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Active | Axial | Standard | 600V | 1V @ 1A | 3µs | 1mA @ 600V | - | 2A | 18pF @ 4V, 1MHz | ||||
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Central Semiconductor Corp | DIODE GEN PURP 125V 200MA DO35 | DO-204AH, DO-35, Axial | - | Small Signal =< 200mA (Io), Any Speed | Through Hole | Active | DO-35 | Standard | 125V | 1.15V @ 300mA | 3µs | 3nA @ 125V | -65°C ~ 200°C | 200mA | - | |||||
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Central Semiconductor Corp | DIODE GEN PURP 125V 200MA DO35 | DO-204AH, DO-35, Axial | - | Bulk | Small Signal =< 200mA (Io), Any Speed | Through Hole | Active | DO-35 | Standard | 125V | 1.15V @ 300mA | 3µs | 3nA @ 125V | -65°C ~ 200°C | 200mA | - | ||||
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ON Semiconductor | DIODE GEN PURP 150V 200MA DO35 | DO-204AH, DO-35, Axial | - | Bulk | Small Signal =< 200mA (Io), Any Speed | Through Hole | Active | DO-35 | Standard | 150V | 1V @ 200mA | 3µs | 1nA @ 125V | 175°C (Max) | 200mA | 8pF @ 0V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 150V 200MA DO35 | DO-204AH, DO-35, Axial | - | Small Signal =< 200mA (Io), Any Speed | Through Hole | Active | DO-35 | Standard | 150V | 1V @ 200mA | 3µs | 1nA @ 125V | 175°C (Max) | 200mA | 8pF @ 0V, 1MHz | |||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.3KV 3A DO201AD | DO-201AD, Axial | SUPERECTIFIER® | Standard Recovery >500ns, > 200mA (Io) | Through Hole | Obsolete | DO-201AD | Standard | 1300V | 1.1V @ 3A | 3µs | 5µA @ 1300V | -65°C ~ 175°C | 3A | 40pF @ 4V, 1MHz | |||||
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Infineon Technologies | DIODE SCHOTTKY 600V 6A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 600V | 1.7V @ 6A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 6A (DC) | 300pF @ 0V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 6A TO220AB | TO-220-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | P-TO220AB | Silicon Carbide Schottky | 600V | 1.7V @ 6A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 6A (DC) | 300pF @ 0V, 1MHz |