- Manufacture :
- Package / Case :
- Series :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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STMicroelectronics | DIODE GEN PURP 40V 16A TO220 | TO-220-3 | - | Tube | - | Through Hole | Obsolete | TO-220 | Standard | 40V | 180mV @ 16A | - | 1µA @ 40V | -45°C ~ 175°C | 16A (DC) | - | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 6A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 600V | 1.7V @ 6A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 6A (DC) | 300pF @ 0V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 600V 6A TO220AB | TO-220-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | P-TO220AB | Silicon Carbide Schottky | 600V | 1.7V @ 6A | 0ns | 200µA @ 600V | -55°C ~ 175°C | 6A (DC) | 300pF @ 0V, 1MHz |