- Manufacture :
- Mounting Type :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Semtech Corporation | DIODE GEN PURP 1KV 150A | Module | Bulk | Standard Recovery >500ns, > 200mA (Io) | Stud Mount | Active | - | Standard | 1000V | 1.15V @ 100A | 2µs | 12µA @ 1000V | -55°C ~ 150°C | 150A | - | ||||
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Semtech Corporation | DIODE GEN PURP 600V 150A | Module | Bulk | Standard Recovery >500ns, > 200mA (Io) | Stud Mount | Active | - | Standard | 600V | 1.15V @ 100A | 2µs | 12µA @ 600V | -55°C ~ 150°C | 150A | - | ||||
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Semtech Corporation | DIODE GEN PURP 600V 150A | Module | Bulk | Standard Recovery >500ns, > 200mA (Io) | Stud Mount | Active | - | Standard, Reverse Polarity | 600V | 1.15V @ 100A | 2µs | 12µA @ 600V | -55°C ~ 150°C | 150A | - | ||||
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ON Semiconductor | 650V 20A SIC SBD | TO-247-3 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 13A (DC) | 575pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 10A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | No Recovery Time > 500mA (Io) | Surface Mount | Active | D-PAK (TO-252) | Silicon Carbide Schottky | 650V | 1.75V @ 10A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 18A (DC) | 575pF @ 1V, 100kHz | |||||
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ON Semiconductor | 650V 10A SIC SBD | TO-220-2 Full Pack | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220F-2FS | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 10A (DC) | 575pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V 15A TO220-2 | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 10A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 15A (DC) | 575pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V 15A TO220-2 | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 10A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 15A (DC) | 575pF @ 1V, 100kHz |