- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | - | 0ns | 75µA @ 650V | 175°C (Max) | 15A (DC) | 750pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 25V 1A PMDU | SOD-123F | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | PMDU | Schottky | 25V | 350mV @ 1A | - | 700µA @ 20V | 125°C (Max) | 1A | - | |||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 15A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 15A | 0ns | 300µA @ 600V | 175°C (Max) | 15A (DC) | 550pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | DIODE SCHOTTKY 1200V 15A TO220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 15A | 0ns | 300µA @ 1200V | 175°C (Max) | 15A (DC) | 790pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 15A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 15A | 0ns | 300µA @ 600V | 175°C (Max) | 15A (DC) | 550pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1.2KV 15A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 1200V | 1.6V @ 15A | 0ns | 300µA @ 1200V | 175°C (Max) | 15A (DC) | 790pF @ 1V, 1MHz | ||||
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ON Semiconductor | 1200V 20A AUTO SIC SBD | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 1200V | - | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 15A (DC) | 612pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 8A SIC SBD | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | D-PAK (TO-252) | Silicon Carbide Schottky | 650V | 1.75V @ 8A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 15A (DC) | 463pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 15A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 15A | - | 200µA @ 1200V | -55°C ~ 175°C | 15A (DC) | 936pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V 15A TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 12A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 15A (DC) | 665pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V 15A TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 10A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 15A (DC) | 575pF @ 1V, 100kHz | ||||
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Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 45V 15A TO277A | TO-277, 3-PowerDFN | Automotive, AEC-Q101, eSMP®, TMBS® | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TO-277A (SMPC) | Schottky | 45V | 580mV @ 15A | - | 1.5mA @ 45V | -40°C ~ 150°C | 15A (DC) | - | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | - | 0ns | 75µA @ 650V | 175°C (Max) | 15A (DC) | 750pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 15A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 15A | 0ns | 300µA @ 600V | 175°C (Max) | 15A (DC) | 550pF @ 1V, 1MHz | |||||
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ON Semiconductor | DIODE SCHOTTKY 650V 15A TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 12A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 15A (DC) | 665pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V 15A TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 10A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 15A (DC) | 575pF @ 1V, 100kHz |