- Package / Case :
- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | DIODE GEN PURP 530V 20A TO220NFM | TO-220-3 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 530V | 2V @ 20A | 30ns | 10µA @ 530V | 150°C (Max) | 20A | - | |||||
|
ROHM Semiconductor | DIODE SCHOTTKY 600V 8A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220AC | Silicon Carbide Schottky | 600V | 1.7V @ 8A | 0ns | 160µA @ 600V | 175°C (Max) | 8A | 345pF @ 1V, 1MHz | |||||
|
ON Semiconductor | DIODE GEN PURP 600V 8A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220-2L | Standard | 600V | 2.1V @ 8A | 35ns | 100µA @ 600V | -65°C ~ 175°C | 8A | - | |||||
|
ON Semiconductor | DIODE GEN PURP 600V 8A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220-2L | Standard | 600V | 2.1V @ 8A | 35ns | 100µA @ 600V | -65°C ~ 175°C | 8A | - | |||||
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 8A DO214AB | DO-214AB, SMC | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Not For New Designs | DO-214AB (SMC) | Standard | 800V | 985mV @ 8A | - | 10µA @ 800V | -55°C ~ 150°C | 8A | 48pF @ 4V, 1MHz |