- Package / Case :
- Series :
- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ON Semiconductor | DIODE GEN PURP 600V 80A TO218 | TO-218-1 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-218 | Standard | 600V | 1.6V @ 80A | 85ns | 250µA @ 600V | - | 80A | - | ||||
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 30V 10A L-FLAT | L-FLAT™ | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Obsolete | L-FLAT™ (4x5.5) | Schottky | 30V | 0.47V @ 10A | - | 1mA @ 30V | -40°C ~ 125°C | 10A (DC) | 530pF @ 10V, 1MHz | ||||
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Infineon Technologies | DIODE SCHOTTKY 300V 10A TO220-2 | TO-220-2 | CoolSiC™ | Tube | No Recovery Time > 500mA (Io) | Through Hole | Obsolete | PG-TO220-2-2 | Silicon Carbide Schottky | 300V | 1.7V @ 10A | 0ns | 200µA @ 300V | -55°C ~ 175°C | 10A (DC) | 600pF @ 0V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 600V 80A TO218 | TO-218-1 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-218 | Standard | 600V | 1.6V @ 80A | 85ns | 250µA @ 600V | - | 80A | - |