- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
- Applied Filters :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 800MA SUBSMA | DO-219AB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Standard | 100V | 1.3V @ 800mA | 150ns | 5µA @ 100V | -55°C ~ 150°C | 800mA | 10pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800MA SUB SMA | DO-219AB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Standard | - | 1.3V @ 800mA | 500ns | 5µA @ 1000V | -55°C ~ 150°C | 800mA | 10pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE SCHOTTKY 40V 1A SUB SMA | DO-219AB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Schottky | 40V | 550mV @ 1A | - | 400µA @ 40V | -55°C ~ 125°C | 1A | - | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800MA SUB SMA | DO-219AB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Standard | - | 1.3V @ 800mA | 500ns | 5µA @ 1000V | -55°C ~ 150°C | 800mA | 10pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 800MA SUBSMA | DO-219AB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Standard | 200V | 1.3V @ 800mA | 150ns | 5µA @ 200V | -55°C ~ 150°C | 800mA | 10pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 800MA SUBSMA | DO-219AB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Standard | 600V | 1.3V @ 800mA | 250ns | 5µA @ 600V | -55°C ~ 150°C | 800mA | 10pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A SUB SMA | DO-219AB | - | Standard Recovery >500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Standard | 600V | 1.1V @ 1A | 1.8µs | 5µA @ 600V | -55°C ~ 175°C | 1A | 9pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 800MA SUBSMA | DO-219AB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Standard | 100V | 1.3V @ 800mA | 150ns | 5µA @ 100V | -55°C ~ 150°C | 800mA | 10pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE SCHOTTKY 20V 1A SUB SMA | DO-219AB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Schottky | 20V | 450mV @ 1A | - | 400µA @ 20V | -55°C ~ 125°C | 1A | - | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 1KV 1A SUB SMA | DO-219AB | - | Standard Recovery >500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Standard | 1000V | 1.1V @ 1A | 1.8µs | 5µA @ 1000V | -55°C ~ 175°C | 1A | 9pF @ 4V, 1MHz |