- Series :
- Part Status :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
-
- 1.75V @ 10A (6)
- 1.75V @ 12A (4)
- 1.75V @ 15A (2)
- 1.75V @ 20A (2)
- 1.75V @ 30A (2)
- 1.75V @ 5A (2)
- 1.75V @ 6A (4)
- 1.75V @ 8A (2)
- 1.8V @ 15A (4)
- 2.1V @ 15A (2)
- 2.1V @ 30A (2)
- 2.1V @ 4A (2)
- 2.1V @ 8A (6)
- 2.6V @ 15A (2)
- 2.6V @ 30A (2)
- 2.6V @ 4A (4)
- 2.6V @ 8A (2)
- 3.2V @ 15A (2)
- 3.2V @ 30A (2)
- 3.2V @ 8A (2)
- 3.3V @ 8A (4)
- 3.4V @ 8A (2)
- 750mV @ 7.5A (2)
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Applied Filters :
1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ON Semiconductor | DIODE GEN PURP 600V 4A TO220-2L | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2L | Standard | 600V | 2.1V @ 4A | 45ns | 100µA @ 600V | -65°C ~ 150°C | 4A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 4A TO220-2L | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2L | Standard | 600V | 2.6V @ 4A | 25ns | 100µA @ 600V | -65°C ~ 150°C | 4A | - | ||||
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2,445
In-stock
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ON Semiconductor | DIODE GEN PURP 1.2KV 8A TO220-2L | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2L | Standard | 1200V | 3.3V @ 8A | 300ns | 100µA @ 1200V | -55°C ~ 150°C | 8A | 30pF @ 10V, 1MHz | |||
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ON Semiconductor | DIODE GEN PURP 1KV 15A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2L | Standard | 1000V | 1.8V @ 15A | 125ns | 100µA @ 1000V | -65°C ~ 175°C | 15A | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 5A | 0ns | 200µA @ 1200V | - | - | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 30A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Standard | 1200V | 3.2V @ 30A | 85ns | 250µA @ 1200V | -65°C ~ 175°C | 30A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 30A TO220-2L | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Standard | 600V | 2.6V @ 30A | 40ns | 100µA @ 600V | -65°C ~ 150°C | 30A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 8A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Standard | 1200V | 3.2V @ 8A | 70ns | 100µA @ 1200V | -65°C ~ 175°C | 8A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 15A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Standard | 1200V | 3.2V @ 15A | 75ns | 100µA @ 1200V | -65°C ~ 175°C | 15A | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 8.8A (DC) | 361pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE GEN PURP 600V 8A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220-2L | Standard | 600V | 2.1V @ 8A | 35ns | 100µA @ 600V | -65°C ~ 175°C | 8A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 8A TO220-2L | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Standard | 600V | 2.6V @ 8A | 30ns | 100µA @ 600V | -65°C ~ 150°C | 8A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 8A TO220-2L | TO-220-2 | STEALTH™ II | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Standard | 600V | 3.4V @ 8A | 32ns | 100µA @ 600V | -65°C ~ 150°C | 8A | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO220-2 | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 20A | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 20A | 1220pF @ 1V, 100KHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V 30A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 30A | - | 200µA @ 650V | -55°C ~ 175°C | 30A (DC) | 1705pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 15A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 15A | - | 200µA @ 1200V | -55°C ~ 175°C | 15A (DC) | 936pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 10A | - | 200µA @ 1200V | -55°C ~ 175°C | 10A (DC) | 612pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 8A TO220-2 | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 1200V | 1.75V @ 8A | - | 200µA @ 1200V | -55°C ~ 175°C | 8A (DC) | 538pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V 15A TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 12A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 15A (DC) | 665pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V 15A TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 10A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 15A (DC) | 575pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE GEN PURP 600V 15A TO220-2L | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Standard | 600V | 2.6V @ 15A | 35ns | 100µA @ 600V | - | 15A | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 50V 7.5A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Schottky | 50V | 750mV @ 7.5A | - | 500µA @ 50V | -65°C ~ 150°C | 7.5A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 30A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Standard | 600V | 2.1V @ 30A | 45ns | 250µA @ 600V | -65°C ~ 175°C | 30A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 15A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Standard | 600V | 2.1V @ 15A | 40ns | 100µA @ 600V | -65°C ~ 175°C | 15A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 8A TO220-2L | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-220-2L | Standard | 600V | 2.1V @ 8A | 45ns | 100µA @ 600V | -65°C ~ 150°C | 8A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 4A TO220-2L | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2L | Standard | 600V | 2.6V @ 4A | 25ns | 100µA @ 600V | -65°C ~ 150°C | 4A | - | ||||
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ON Semiconductor | DIODE GEN PURP 1.2KV 8A TO220-2L | TO-220-2 | Stealth™ | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2L | Standard | 1200V | 3.3V @ 8A | 300ns | 100µA @ 1200V | -55°C ~ 150°C | 8A | 30pF @ 10V, 1MHz | ||||
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ON Semiconductor | DIODE GEN PURP 1KV 15A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-2L | Standard | 1000V | 1.8V @ 15A | 125ns | 100µA @ 1000V | -65°C ~ 175°C | 15A | - | ||||
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ON Semiconductor | DIODE SCHOTTKY 650V TO220-2 | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220-2L | Silicon Carbide Schottky | 650V | 1.75V @ 6A | 0ns | 200µA @ 650V | -55°C ~ 175°C | 8.8A (DC) | 361pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE GEN PURP 600V 8A TO220AC | TO-220-2 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220-2L | Standard | 600V | 2.1V @ 8A | 35ns | 100µA @ 600V | -65°C ~ 175°C | 8A | - |