- Manufacture :
- Package / Case :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
19 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | - | 0ns | 75µA @ 650V | 175°C (Max) | 15A (DC) | 750pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 4A | 0ns | 20µA @ 650V | 175°C (Max) | 4A (DC) | 200pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 10A | 0ns | 50µA @ 650V | 175°C (Max) | 10A (DC) | 500pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 8A | 0ns | 40µA @ 650V | 175°C (Max) | 8A (DC) | 400pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 6A | 0ns | 30µA @ 650V | 175°C (Max) | 6A (DC) | 300pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 2A | 0ns | 10.8µA @ 650V | 175°C (Max) | 2.15A (DC) | 110pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | - | 0ns | 100µA @ 650V | 175°C (Max) | 20A (DC) | 1000pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | - | 0ns | 60µA @ 650V | 175°C (Max) | 12A (DC) | 600pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | DIODE SCHOTTKY 650V 4A TO220-2 | TO-220-2 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | - | Silicon Carbide Schottky | 650V | 1.5V @ 4A | 0ns | 20µA @ 650V | 175°C (Max) | 4A (DC) | 200pF @ 1V, 1MHz | |||||
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ON Semiconductor | DIODE GEN PURP 1.5KV 4A TO220F | TO-220-2 Full Pack | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220F-2L | Standard | 1500V | 1.5V @ 4A | 170ns | 5µA @ 1500V | -65°C ~ 150°C | 4A | - | |||||
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ON Semiconductor | DIODE GEN PURP 600V 4A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TO-252AA | Standard | 600V | 1.5V @ 4A | 60ns | 100µA @ 600V | -65°C ~ 175°C | 4A | 15pF @ 10V, 1MHz | ||||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | - | 0ns | 75µA @ 650V | 175°C (Max) | 15A (DC) | 750pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 4A | 0ns | 20µA @ 650V | 175°C (Max) | 4A (DC) | 200pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 10A | 0ns | 50µA @ 650V | 175°C (Max) | 10A (DC) | 500pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 8A | 0ns | 40µA @ 650V | 175°C (Max) | 8A (DC) | 400pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 6A | 0ns | 30µA @ 650V | 175°C (Max) | 6A (DC) | 300pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | 1.5V @ 2A | 0ns | 10.8µA @ 650V | 175°C (Max) | 2.15A (DC) | 110pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | - | 0ns | 100µA @ 650V | 175°C (Max) | 20A (DC) | 1000pF @ 1V, 1MHz | |||||
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ROHM Semiconductor | SHORTER RECOVERY TIME, ENABLING | TO-220-2 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220ACP | Silicon Carbide Schottky | 650V | - | 0ns | 60µA @ 650V | 175°C (Max) | 12A (DC) | 600pF @ 1V, 1MHz |