- Mounting Type :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
31 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 6A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 6A | 0ns | 120µA @ 600V | 175°C (Max) | 6A (DC) | 219pF @ 1V, 1MHz | ||||
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 8A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 8A | 0ns | 160µA @ 600V | 175°C (Max) | 8A (DC) | 291pF @ 1V, 1MHz | |||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 6A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 6A | 0ns | 120µA @ 600V | 175°C (Max) | 6A (DC) | 219pF @ 1V, 1MHz | |||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 15A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 15A | 0ns | 300µA @ 600V | 175°C (Max) | 15A (DC) | 550pF @ 1V, 1MHz | |||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 15A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 15A | 0ns | 300µA @ 600V | 175°C (Max) | 15A (DC) | 550pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 10A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 10A | 0ns | 200µA @ 600V | 175°C (Max) | 10A (DC) | 365pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 8A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 8A | 0ns | 160µA @ 600V | 175°C (Max) | 8A (DC) | 291pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 12A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 12A | 0ns | 240µA @ 600V | 175°C (Max) | 12A (DC) | 438pF @ 1V, 1MHz | |||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 10A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 10A | 0ns | 200µA @ 600V | 175°C (Max) | 10A (DC) | 365pF @ 1V, 1MHz | |||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 20A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A (DC) | 730pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 12A TO-220-2 | TO-220-2 | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.55V @ 12A | 0ns | 240µA @ 600V | 175°C (Max) | 12A (DC) | 438pF @ 1V, 1MHz | ||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 20A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A (DC) | 730pF @ 1V, 1MHz | |||||
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | |||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | |||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | |||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | |||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | |||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | |||||
|
|
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A DO214AA | DO-214AA, SMB | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DO-214AA | Silicon Carbide Schottky | 650V | 2V @ 1A | 0ns | 10µA @ 6.5V | -55°C ~ 175°C | 1A (DC) | 76pF @ 1V, 1MHz | |||||
|
|
|
ON Semiconductor | 650V 30A SIC SBD GEN1.5 | TO-247-2 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-2 | Silicon Carbide Schottky | 650V | 1.7V @ 30A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 37A (DC) | 1260pF @ 1V, 100kHz | ||||
|
|
|
ON Semiconductor | 650V 20A SIC SBD GEN1.5 | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 10A (DC) | 421pF @ 1V, 100kHz | ||||
|
|
|
ON Semiconductor | 650V 20A SIC SBD GEN1.5 | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 10A (DC) | 421pF @ 1V, 100kHz | ||||
|
|
STMicroelectronics | AUTOMOTIVE 650 V POWER SCHOTTKY | TO-262-3 Long Leads, I²Pak, TO-262AA | Automotive, AEC-Q101 | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | I2PAK | Silicon Carbide Schottky | 650V | - | 0ns | 100µA @ 650V | -40°C ~ 175°C | 10A | 480pF @ 0V, 1MHz | ||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 8A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 8A | 0ns | 160µA @ 600V | 175°C (Max) | 8A (DC) | 291pF @ 1V, 1MHz | |||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 6A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 6A | 0ns | 120µA @ 600V | 175°C (Max) | 6A (DC) | 219pF @ 1V, 1MHz | |||||
;;2.jpg)
|
|
STMicroelectronics | AUTOMOTIVE 650 V POWER SCHOTTKY | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 650V | - | 0ns | 100µA @ 650V | -40°C ~ 175°C | 10A | 480pF @ 0V, 1MHz | |||||
|
|
|
STMicroelectronics | AUTOMOTIVE 650 V POWER SCHOTTKY | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 650V | - | 0ns | 80µA @ 650V | -40°C ~ 175°C | 8A | 414pF @ 0V, 1MHz | |||||
|
|
|
STMicroelectronics | AUTOMOTIVE 650 V POWER SCHOTTKY | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 650V | - | 0ns | 60µA @ 650V | -40°C ~ 175°C | 6A | 300pF @ 0V, 1MHz | |||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 15A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 15A | 0ns | 300µA @ 600V | 175°C (Max) | 15A (DC) | 550pF @ 1V, 1MHz | |||||
|
|
|
ROHM Semiconductor | DIODE SCHOTTKY 650V 10A TO263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | No Recovery Time > 500mA (Io) | Surface Mount | Active | TO-263AB | Silicon Carbide Schottky | 650V | 1.55V @ 10A | 0ns | 200µA @ 600V | 175°C (Max) | 10A (DC) | 365pF @ 1V, 1MHz |