- Mounting Type :
- Part Status :
- Diode Type :
- Current - Reverse Leakage @ Vr :
-
- 100µA @ 1000V (4)
- 100µA @ 1200V (8)
- 100µA @ 150V (6)
- 100µA @ 200V (2)
- 100µA @ 400V (6)
- 100µA @ 600V (12)
- 100µA @ 650V (8)
- 10µA @ 400V (4)
- 10µA @ 430V (4)
- 10µA @ 600V (8)
- 125µA @ 650V (4)
- 18mA @ 15V (2)
- 200µA @ 1200V (2)
- 200µA @ 300V (2)
- 200µA @ 600V (4)
- 200µA @ 650V (6)
- 250µA @ 1200V (4)
- 300µA @ 600V (2)
- 400µA @ 600V (2)
- 40µA @ 650V (4)
- 50µA @ 200V (2)
- 50µA @ 400V (2)
- 50µA @ 600V (2)
- Operating Temperature - Junction :
- Current - Average Rectified (Io) :
- Capacitance @ Vr, F :
-
- 150pF @ 0V, 1MHz (2)
- 28pF @ 600V, 1MHz (2)
- 325pF @ 1V, 1MHz (2)
- 421pF @ 1V, 100kHz (4)
- 42pF @ 4V, 1MHz (2)
- 430pF @ 1V, 1MHz (4)
- 463pF @ 1V, 100kHz (2)
- 500pF @ 1V, 1MHz (4)
- 550pF @ 1V, 1MHz (2)
- 575pF @ 1V, 100kHz (2)
- 600pF @ 0V, 1MHz (2)
- 612pF @ 1V, 100kHz (2)
- 695pF @ 0V, 1MHz (8)
- 730pF @ 1V, 1MHz (2)
- 820pF @ 5V, 1MHz (6)
- 887pF @ 1V, 100kHz (2)
51 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Sanken | DIODE GEN PURP 600V 10A TO220FP | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-220-F2 | Standard | 600V | 1.7V @ 10A | 50ns | 100µA @ 600V | -40°C ~ 150°C | 10A | - | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 600V 10A TO220FM | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220FM | Silicon Carbide Schottky | 600V | 1.7V @ 10A | 0ns | 200µA @ 600V | 150°C (Max) | 10A (DC) | 430pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE GEN PURP 430V 10A LPDS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | LPDS | Standard | 430V | 1.7V @ 10A | 25ns | 10µA @ 430V | 150°C (Max) | 10A | - | |||||
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ROHM Semiconductor | FAST RECOVERY DIODES (CORRESPOND | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101 | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | LPDS | Standard | 430V | 1.7V @ 10A | 25ns | 10µA @ 430V | 150°C (Max) | 10A | 150pF @ 0V, 1MHz | |||||
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ROHM Semiconductor | DIODE SCHOTTKY 600V 10A TO220AC | TO-220-2 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Not For New Designs | TO-220AC | Silicon Carbide Schottky | 600V | 1.7V @ 10A | 0ns | 200µA @ 600V | 175°C (Max) | 10A | 430pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 15A TO247 | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247 | Standard | 600V | 2.8V @ 30A | 35ns | 10µA @ 600V | 150°C (Max) | 15A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 10A TO220NFM | TO-220-2 Full Pack | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Not For New Designs | TO-220NFM | Standard | 600V | 1.7V @ 10A | 40ns | 10µA @ 600V | 150°C (Max) | 10A | - | ||||
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ROHM Semiconductor | DIODE GEN PURP 600V 30A TO247 | TO-247-3 | - | Bulk | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247 | Standard | 600V | 1.55V @ 30A | 60ns | 10µA @ 600V | 150°C (Max) | 30A | - | ||||
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ROHM Semiconductor | DIODE SILICON 650V 20A TO247 | TO-247-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247 | Silicon Carbide Schottky | 650V | 1.55V @ 20A | 0ns | 400µA @ 600V | 175°C (Max) | 20A | 730pF @ 1V, 1MHz | ||||
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ROHM Semiconductor | DIODE SCHOTTKY 1200V 10A TO247 | TO-247-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247 | Silicon Carbide Schottky | 1200V | - | 0ns | - | 175°C (Max) | 10A (DC) | - | ||||
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ROHM Semiconductor | DIODE SILICON 650V 15A TO247 | TO-247-3 | - | Tube | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247 | Silicon Carbide Schottky | 650V | 1.55V @ 15A | 0ns | 300µA @ 600V | 175°C (Max) | 15A | 550pF @ 1V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY 150V TO247AD | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247AD | Schottky | 150V | 830mV @ 30A | - | 100µA @ 150V | -55°C ~ 175°C | - | 820pF @ 5V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 Full Pack, Isolated Tab | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | ITO-220AC | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 100µA @ 650V | -55°C ~ 175°C | 10A | 695pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 100µA @ 650V | -55°C ~ 175°C | 10A | 695pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY 150V TO247AD | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247AD | Schottky | 150V | 830mV @ 30A | - | 100µA @ 150V | -55°C ~ 175°C | - | 820pF @ 5V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 Full Pack, Isolated Tab | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | ITO-220AC | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 100µA @ 650V | -55°C ~ 175°C | 10A | 695pF @ 0V, 1MHz | ||||
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SMC Diode Solutions | DIODE SCHOTTKY SILICON CARBIDE S | TO-220-2 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-220AC | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 100µA @ 650V | -55°C ~ 175°C | 10A | 695pF @ 0V, 1MHz | ||||
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Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Bulk | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 1200V | 1.7V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 500pF @ 1V, 1MHz | ||||
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Central Semiconductor Corp | DIODE SCHOTTKY 650V 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | DPAK | Schottky | 650V | 1.7V @ 10A | - | 125µA @ 650V | -55°C ~ 175°C | 10A | 28pF @ 600V, 1MHz | |||||
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Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 1200V | 1.7V @ 10A | 0ns | 250µA @ 1200V | -55°C ~ 175°C | 10A | 500pF @ 1V, 1MHz | |||||
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Central Semiconductor Corp | DIODE SCHOTTKY 650V 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tube | No Recovery Time > 500mA (Io) | Surface Mount | Active | DPAK | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 125µA @ 650V | -55°C ~ 175°C | 10A (DC) | 325pF @ 1V, 1MHz | ||||
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Central Semiconductor Corp | DIODE GEN PURP 600V 10A TLM364 | 3-SMD, Flat Leads | - | Fast Recovery =< 500ns, > 200mA (Io) | Surface Mount | Active | TLM364 | Standard | 600V | 1.7V @ 10A | 25ns | 10µA @ 600V | -65°C ~ 175°C | 10A | 42pF @ 4V, 1MHz | |||||
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ON Semiconductor | 650V 30A SIC SBD | TO-247-3 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 23A (DC) | 887pF @ 1V, 100kHz | ||||
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ON Semiconductor | 1200V 20A AUTO SIC SBD | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 1200V | - | 0ns | 200µA @ 1200V | -55°C ~ 175°C | 15A (DC) | 612pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 20A SIC SBD | TO-247-3 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 13A (DC) | 575pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 16A SIC SBD | TO-247-3 | - | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | - | 0ns | 200µA @ 650V | -55°C ~ 175°C | 11A (DC) | 463pF @ 1V, 100kHz | ||||
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ON Semiconductor | 650V 20A SIC SBD GEN1.5 | TO-247-3 | Automotive, AEC-Q101 | - | No Recovery Time > 500mA (Io) | Through Hole | Active | TO-247-3 | Silicon Carbide Schottky | 650V | 1.7V @ 10A | 0ns | 40µA @ 650V | -55°C ~ 175°C | 10A (DC) | 421pF @ 1V, 100kHz | ||||
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ON Semiconductor | DIODE GEN PURP 400V 60A TO247 | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247 | Standard | 400V | 1.3V @ 60A | 85ns | 100µA @ 400V | -65°C ~ 150°C | 60A | - | ||||
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ON Semiconductor | DIODE GEN PURP 600V 60A TO247 | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Active | TO-247 | Standard | 600V | 1.7V @ 60A | 80ns | 100µA @ 600V | -65°C ~ 150°C | 60A | - | ||||
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 60A TO247AC | TO-247-3 | - | Tube | Fast Recovery =< 500ns, > 200mA (Io) | Through Hole | Obsolete | TO-247AC | Standard | 1200V | 1.4V @ 60A | 480ns | 100µA @ 1200V | -40°C ~ 150°C | 60A | - |